PMID- 15685987
OWN - NLM
STAT- MEDLINE
DCOM- 20050512
LR  - 20180925
IS  - 0273-1223 (Print)
IS  - 0273-1223 (Linking)
VI  - 50
IP  - 11
DP  - 2004
TI  - Ion selective transistor modelling for behavioural simulations.
PG  - 115-23
AB  - Computer aided design and simulation of complex silicon microsystems oriented for 
      environment monitoring requires efficient and accurate models of ion selective 
      sensors, compatible with the existing behavioural simulators. This paper concerns 
      sensors based on the back-side contact Ion Sensitive Field Effect Transistors 
      (ISFETs). The ISFETs with silicon nitride gate are sensitive to hydrogen ion 
      concentration. When the transistor gate is additionally covered with a special 
      ion selective membrane, selectivity to other than hydrogen ions can be achieved. 
      Such sensors are especially suitable for flow analysis of solutions containing 
      various ions. The problem of ion selective sensor modelling is illustrated here 
      on a practical example of an ammonium sensitive membrane. The membrane is 
      investigated in the presence of some interfering ions and appropriate selectivity 
      coefficients are determined. Then, the model of the whole sensor is created and 
      used in subsequent electrical simulations. Providing that appropriate selectivity 
      coefficients are known, the proposed model is applicable for any membrane, and 
      can be straightforwardly implemented for behavioural simulation of water 
      monitoring microsystems. The model has been already applied in a real on-line 
      water pollution monitoring system for detection of various contaminants.
FAU - Daniel, M
AU  - Daniel M
AD  - Department of Microelectronics & Computer Science, Technical University of Lodz, 
      93-590 Lodz, Poland. daniel@dmcs.p.lodz.pl
FAU - Janicki, M
AU  - Janicki M
FAU - Wroblewski, W
AU  - Wroblewski W
FAU - Dybko, A
AU  - Dybko A
FAU - Brzozka, Z
AU  - Brzozka Z
FAU - Napieralski, A
AU  - Napieralski A
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - England
TA  - Water Sci Technol
JT  - Water science and technology : a journal of the International Association on 
      Water Pollution Research
JID - 9879497
RN  - 0 (Ions)
RN  - 0 (Quaternary Ammonium Compounds)
RN  - 0 (Silicon Compounds)
RN  - 0 (Water Pollutants)
RN  - 059QF0KO0R (Water)
RN  - 7YNJ3PO35Z (Hydrogen)
RN  - QHB8T06IDK (silicon nitride)
SB  - IM
MH  - Computer Simulation
MH  - Hydrogen
MH  - Ion-Selective Electrodes
MH  - Ions
MH  - Models, Statistical
MH  - Models, Theoretical
MH  - Quaternary Ammonium Compounds/chemistry
MH  - Signal Processing, Computer-Assisted
MH  - Silicon Compounds/chemistry
MH  - Waste Disposal, Fluid/*methods
MH  - Water/analysis
MH  - Water Pollutants/*analysis
MH  - Water Pollution
EDAT- 2005/02/03 09:00
MHDA- 2005/05/13 09:00
CRDT- 2005/02/03 09:00
PHST- 2005/02/03 09:00 [pubmed]
PHST- 2005/05/13 09:00 [medline]
PHST- 2005/02/03 09:00 [entrez]
PST - ppublish
SO  - Water Sci Technol. 2004;50(11):115-23.