PMID- 16089485
OWN - NLM
STAT- MEDLINE
DCOM- 20050916
LR  - 20200930
IS  - 1530-6984 (Print)
IS  - 1530-6984 (Linking)
VI  - 5
IP  - 8
DP  - 2005 Aug
TI  - Transformation of self-assembled InAs/InP quantum dots into quantum rings without 
      capping.
PG  - 1541-3
AB  - Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum 
      rings (QRs) is studied. In contrast to the typical approach to III--V 
      semiconductor QR growth, the QDs are not capped to form rings. Atomic force 
      micrographs reveal a drastic change from InAs QDs into rings after a growth 
      interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs 
      QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange 
      reactions is proposed.
FAU - Sormunen, Jaakko
AU  - Sormunen J
AD  - Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P.O. 
      Box 3500, FIN-02015 TKK, Finland. jaakko.sormunen@hut.fi
FAU - Riikonen, Juha
AU  - Riikonen J
FAU - Mattila, Marco
AU  - Mattila M
FAU - Tiilikainen, Jouni
AU  - Tiilikainen J
FAU - Sopanen, Markku
AU  - Sopanen M
FAU - Lipsanen, Harri
AU  - Lipsanen H
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
RN  - 0 (Arsenicals)
RN  - 0 (Phosphines)
RN  - 045A6V3VFX (Indium)
RN  - J1A23S0911 (indium arsenide)
RN  - SD36LG60G1 (indium phosphide)
SB  - IM
MH  - Arsenicals/analysis/*chemistry
MH  - Crystallization/*methods
MH  - Indium/analysis/*chemistry
MH  - Materials Testing
MH  - Molecular Conformation
MH  - Nanostructures/analysis/*chemistry/*ultrastructure
MH  - Phase Transition
MH  - Phosphines/analysis/*chemistry
MH  - *Quantum Dots
EDAT- 2005/08/11 09:00
MHDA- 2005/09/17 09:00
CRDT- 2005/08/11 09:00
PHST- 2005/08/11 09:00 [pubmed]
PHST- 2005/09/17 09:00 [medline]
PHST- 2005/08/11 09:00 [entrez]
AID - 10.1021/nl050646v [doi]
PST - ppublish
SO  - Nano Lett. 2005 Aug;5(8):1541-3. doi: 10.1021/nl050646v.