PMID- 16196887
OWN - NLM
STAT- MEDLINE
DCOM- 20051018
LR  - 20081121
IS  - 0031-9007 (Print)
IS  - 0031-9007 (Linking)
VI  - 95
IP  - 8
DP  - 2005 Aug 19
TI  - Polarity switching and transient responses in single nanotube nanofluidic 
      transistors.
PG  - 086607
AB  - We report the integration of inorganic nanotubes into metal-oxide-solution field 
      effect transistors (FETs) which exhibit rapid field effect modulation of ionic 
      conductance. Surface functionalization, analogous to doping in semiconductors, 
      can switch the nanofluidic transistors from p-type to ambipolar and n-type field 
      effect transistors. Transient study reveals the kinetics of field effect 
      modulation is controlled by ion-exchange step. Nanofluidic FETs have potential 
      implications in subfemtoliter analytical technology and large-scale nanofluidic 
      integration.
FAU - Fan, Rong
AU  - Fan R
AD  - Department of Chemistry, University of California, Berkeley, California 94720, 
      USA.
FAU - Yue, Min
AU  - Yue M
FAU - Karnik, Rohit
AU  - Karnik R
FAU - Majumdar, Arun
AU  - Majumdar A
FAU - Yang, Peidong
AU  - Yang P
LA  - eng
PT  - Journal Article
PT  - Research Support, N.I.H., Extramural
PT  - Research Support, U.S. Gov't, Non-P.H.S.
PT  - Research Support, U.S. Gov't, P.H.S.
DEP - 20050819
PL  - United States
TA  - Phys Rev Lett
JT  - Physical review letters
JID - 0401141
RN  - 0 (Metals)
RN  - 0 (Oxides)
RN  - 7631-86-9 (Silicon Dioxide)
SB  - IM
MH  - Electric Conductivity
MH  - Metals/chemistry
MH  - Microfluidic Analytical Techniques/*methods
MH  - Nanotubes/*chemistry
MH  - Oxides/chemistry
MH  - Semiconductors
MH  - Silicon Dioxide
MH  - Static Electricity
EDAT- 2005/10/04 09:00
MHDA- 2005/10/19 09:00
CRDT- 2005/10/04 09:00
PHST- 2005/05/01 00:00 [received]
PHST- 2005/10/04 09:00 [pubmed]
PHST- 2005/10/19 09:00 [medline]
PHST- 2005/10/04 09:00 [entrez]
AID - 10.1103/PhysRevLett.95.086607 [doi]
PST - ppublish
SO  - Phys Rev Lett. 2005 Aug 19;95(8):086607. doi: 10.1103/PhysRevLett.95.086607. Epub 
      2005 Aug 19.