PMID- 16834428
OWN - NLM
STAT- MEDLINE
DCOM- 20060928
LR  - 20200930
IS  - 1530-6984 (Print)
IS  - 1530-6984 (Linking)
VI  - 6
IP  - 7
DP  - 2006 Jul
TI  - Fabrication and device characterization of omega-shaped-gate ZnO nanowire 
      field-effect transistors.
PG  - 1454-8
AB  - Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have 
      attracted a great deal of attention recently, because theoretical simulations 
      predicted that they should have a higher device performance than nanowire-based 
      FETs with other gate geometries. OSG FETs with channels composed of ZnO nanowires 
      were successfully fabricated in this study using photolithographic processes. In 
      the OSG FETs fabricated on oxidized Si substrates, the channels composed of ZnO 
      nanowires with diameters of about 110 nm are coated with Al(2)O(3) using atomic 
      layer deposition, which surrounds the channels and acts as a gate dielectric. 
      About 80% of the surfaces of the nanowires coated with Al(2)O(3) are covered with 
      the gate metal to form OSG FETs. A representative OSG FET fabricated in this 
      study exhibits a mobility of 30.2 cm(2)/ (V s), a peak transconductance of 0.4 
      muS (V(g) = -2.2 V), and an I(on)/I(off) ratio of 10(7). To the best of our 
      knowledge, the value of the I(on)/I(off) ratio obtained from this OSG FET is 
      higher than that of any of the previously reported nanowire-based FETs. Its 
      mobility, peak transconductance, and I(on)/I(off) ratio are remarkably enhanced 
      by 3.5, 32, and 10(6) times, respectively, compared with a back-gate FET with the 
      same ZnO nanowire channel as utilized in the OSG FET.
FAU - Keem, Kihyun
AU  - Keem K
AD  - Department of Electrical Engineering and Institute for Nano Science, Korea 
      University, Seoul, Korea.
FAU - Jeong, Dong-Young
AU  - Jeong DY
FAU - Kim, Sangsig
AU  - Kim S
FAU - Lee, Moon-Sook
AU  - Lee MS
FAU - Yeo, In-Seok
AU  - Yeo IS
FAU - Chung, U-In
AU  - Chung UI
FAU - Moon, Joo-Tae
AU  - Moon JT
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
RN  - LMI26O6933 (Aluminum Oxide)
RN  - SOI2LOH54Z (Zinc Oxide)
SB  - IM
MH  - Aluminum Oxide/chemistry
MH  - Equipment Design
MH  - Microscopy, Scanning Tunneling
MH  - *Nanostructures
MH  - Surface Properties
MH  - Transistors, Electronic
MH  - Zinc Oxide/*chemistry
EDAT- 2006/07/13 09:00
MHDA- 2006/09/29 09:00
CRDT- 2006/07/13 09:00
PHST- 2006/07/13 09:00 [pubmed]
PHST- 2006/09/29 09:00 [medline]
PHST- 2006/07/13 09:00 [entrez]
AID - 10.1021/nl060708x [doi]
PST - ppublish
SO  - Nano Lett. 2006 Jul;6(7):1454-8. doi: 10.1021/nl060708x.