PMID- 17212434
OWN - NLM
STAT- MEDLINE
DCOM- 20070313
LR  - 20200930
IS  - 1530-6984 (Print)
IS  - 1530-6984 (Linking)
VI  - 7
IP  - 1
DP  - 2007 Jan
TI  - High-performance carbon nanotube field effect transistors with a thin gate 
      dielectric based on a self-assembled monolayer.
PG  - 22-7
AB  - Individual single-walled carbon nanotube (SWCNT) field effect transistors (FETs) 
      with a 2 nm thick silane-based organic self-assembled monolayer (SAM) gate 
      dielectric have been manufactured. The FETs exhibit a unique combination of 
      excellent device performance parameters. In particular, they operate with a 
      gate-source voltage of only -1 V and exhibit good saturation, large 
      transconductance, and small hysteresis (<or=100 mV), as well as a very low 
      subthreshold swing (60 mV/dec) under ambient conditions. The SAM-based gate 
      dielectric opens the possibility of fabricating transistors operating at low 
      voltages and constitutes a major step toward nanotube-based flexible electronics.
FAU - Weitz, Ralf Thomas
AU  - Weitz RT
AD  - Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 
      Stuttgart, Germany.
FAU - Zschieschang, Ute
AU  - Zschieschang U
FAU - Effenberger, Franz
AU  - Effenberger F
FAU - Klauk, Hagen
AU  - Klauk H
FAU - Burghard, Marko
AU  - Burghard M
FAU - Kern, Klaus
AU  - Kern K
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
RN  - 0 (Nanotubes, Carbon)
RN  - 7631-86-9 (Silicon Dioxide)
SB  - IM
MH  - Electricity
MH  - Microscopy, Atomic Force
MH  - Nanotubes, Carbon/*chemistry
MH  - Silicon Dioxide/chemistry
EDAT- 2007/01/11 09:00
MHDA- 2007/03/14 09:00
CRDT- 2007/01/11 09:00
PHST- 2007/01/11 09:00 [pubmed]
PHST- 2007/03/14 09:00 [medline]
PHST- 2007/01/11 09:00 [entrez]
AID - 10.1021/nl061534m [doi]
PST - ppublish
SO  - Nano Lett. 2007 Jan;7(1):22-7. doi: 10.1021/nl061534m.