PMID- 18047128 OWN - NLM STAT- MEDLINE DCOM- 20080103 LR - 20131121 IS - 1533-4880 (Print) IS - 1533-4880 (Linking) VI - 7 IP - 11 DP - 2007 Nov TI - Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics. PG - 4101-5 AB - We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs. FAU - Yoon, Ahnsook AU - Yoon A AD - Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea. FAU - Hong, Woong-Ki AU - Hong WK FAU - Lee, Takhee AU - Lee T LA - eng PT - Journal Article PT - Research Support, Non-U.S. Gov't PL - United States TA - J Nanosci Nanotechnol JT - Journal of nanoscience and nanotechnology JID - 101088195 RN - 0 (Polymers) RN - SOI2LOH54Z (Zinc Oxide) SB - IM MH - Crystallization/*methods MH - Electric Conductivity MH - Equipment Design MH - Equipment Failure Analysis MH - Materials Testing MH - Nanostructures/*chemistry/ultrastructure MH - Nanotechnology/*instrumentation MH - Particle Size MH - Polymers/chemistry MH - *Transistors, Electronic MH - Zinc Oxide/*chemistry EDAT- 2007/12/01 09:00 MHDA- 2008/01/04 09:00 CRDT- 2007/12/01 09:00 PHST- 2007/12/01 09:00 [pubmed] PHST- 2008/01/04 09:00 [medline] PHST- 2007/12/01 09:00 [entrez] PST - ppublish SO - J Nanosci Nanotechnol. 2007 Nov;7(11):4101-5.