PMID- 18276551
OWN - NLM
STAT- MEDLINE
DCOM- 20080314
LR  - 20080215
IS  - 0885-3010 (Print)
IS  - 0885-3010 (Linking)
VI  - 54
IP  - 12
DP  - 2007 Dec
TI  - Key integration technologies for nanoscale FRAMs.
PG  - 2535-40
LID - 10.1109/TUFFC.2007.573 [doi]
AB  - We discuss key technologies of 180-nm node ferroelectric memories, whose process 
      integration is becoming extremely complex when device dimension shrinks into a 
      nano scale. This is because process technology in ferroelectric integration does 
      not extend to conventional shrink technology due to many difficulties of coping 
      with metal-insulator-metal (MIM) capacitors. The key integration technologies in 
      ferroelectric random access memory (FRAM) comprise: etching technology to have 
      less plasma damage; stack technology for the preparation of robust 
      ferroelectrics; capping technology to encapsulate cell capacitors; and vertical 
      conjunction technology to connect cell capacitors to the plate line. What has 
      been achieved from these novel approaches is not only to have a peak-to-peak 
      value of 675 mV in bit-line potential but also to ensure a sensing margin of 300 
      mV in opposite-state retention, even after 1000 hour suffering at 150 degrees C.
FAU - Jung, Dong J
AU  - Jung DJ
AD  - Advanced Technology Development Team 2, Semiconductor R and D Center, Samsung 
      Electronics Company Ltd., Yongin-City, Gyunggi-Do, Korea. djjung@samsung.com
FAU - Kim, Hyun-Ho
AU  - Kim HH
FAU - Kim, Kinam
AU  - Kim K
LA  - eng
PT  - Journal Article
PL  - United States
TA  - IEEE Trans Ultrason Ferroelectr Freq Control
JT  - IEEE transactions on ultrasonics, ferroelectrics, and frequency control
JID - 9882735
SB  - IM
MH  - *Computer Storage Devices
MH  - Equipment Design
MH  - Equipment Failure Analysis
MH  - Information Storage and Retrieval/*methods
MH  - Nanotechnology/*instrumentation/methods
MH  - Signal Processing, Computer-Assisted/*instrumentation
MH  - Systems Integration
EDAT- 2008/02/16 09:00
MHDA- 2008/03/15 09:00
CRDT- 2008/02/16 09:00
PHST- 2008/02/16 09:00 [pubmed]
PHST- 2008/03/15 09:00 [medline]
PHST- 2008/02/16 09:00 [entrez]
AID - 10.1109/TUFFC.2007.573 [doi]
PST - ppublish
SO  - IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Dec;54(12):2535-40. doi: 
      10.1109/TUFFC.2007.573.