PMID- 18572702
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20080813
LR  - 20080624
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 8
IP  - 5
DP  - 2008 May
TI  - Synthesis of nano-dimensional ZnO and Ga doped ZnO thin films by vapor phase 
      transport and study as transparent conducting oxide.
PG  - 2655-8
AB  - We report synthesis of polycrystalline ZnO and Ga doped ZnO (ZnO:Ga) thin films 
      (approximately 80 nm) on Si and quartz substrates in a non-vacuum muffle furnace, 
      a simple and cost-effective route, without any catalyst/reactive carrier gases, 
      at relatively low processing temperature of 550 degrees C. The crystalline phases 
      of the films are identified by grazing angle X-ray diffraction (GAXRD). The 
      growth of ZnO films is examined with scanning electron microscope (SEM) as a 
      function of deposition time. An optical transmission of approximately 90% is 
      observed for pure ZnO film having a resistivity of approximately 2.1 Omega-cm as 
      measured by van der Pauw technique. Doping with Ga results in single phase ZnO:Ga 
      films, retaining an optical transmission of about 80% and three orders of 
      magnitude decrease in resistivity as compared to pure ZnO film.
FAU - Ghosh, S
AU  - Ghosh S
AD  - Nanostech Laboratory, Department of Physics, Indian Institute of 
      Technology-Delhi, Hauz Khas, New Delhi 110016, India.
FAU - Saurav, M
AU  - Saurav M
FAU - Pandey, B
AU  - Pandey B
FAU - Srivastava, P
AU  - Srivastava P
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2008/06/25 09:00
MHDA- 2008/06/25 09:01
CRDT- 2008/06/25 09:00
PHST- 2008/06/25 09:00 [pubmed]
PHST- 2008/06/25 09:01 [medline]
PHST- 2008/06/25 09:00 [entrez]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2008 May;8(5):2655-8.