PMID- 19159186
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20090406
LR  - 20200930
IS  - 1530-6984 (Print)
IS  - 1530-6984 (Linking)
VI  - 9
IP  - 2
DP  - 2009 Feb
TI  - Selective growth of well-aligned semiconducting single-walled carbon nanotubes.
PG  - 800-5
LID - 10.1021/nl803496s [doi]
AB  - High-density arrays of perfectly aligned single-walled carbon nanotubes (SWNTs) 
      consisting almost exclusively of semiconducting nanotubes were grown on ST-cut 
      single crystal quartz substrates. Raman spectroscopy together with electrical 
      measurements of field effect transistors (FETs) fabricated from the as-grown 
      samples showed that over 95% of the nanotubes in the arrays are semiconducting. 
      The mechanism of selective growth was explored. It is proposed that introducing 
      methanol in the growth process, combined with the interaction between the SWNTs 
      and the quartz lattice, leads to the selective growth of aligned semiconducting 
      nanotubes. Such a high density of horizontally aligned semiconducting SWNTs can 
      be readily used in high current nanoFETs and sensors. This method demonstrates 
      great promise to solve one of the most difficult problems which limits 
      application of carbon nanotubes in nanoelectronicsthe coexistence of metallic and 
      semiconducting nanotubes in samples produced by most, if not all, growth methods.
FAU - Ding, Lei
AU  - Ding L
AD  - Department of Chemistry, Duke University, Durham, North Carolina 27708, USA.
FAU - Tselev, Alexander
AU  - Tselev A
FAU - Wang, Jinyong
AU  - Wang J
FAU - Yuan, Dongning
AU  - Yuan D
FAU - Chu, Haibin
AU  - Chu H
FAU - McNicholas, Thomas P
AU  - McNicholas TP
FAU - Li, Yan
AU  - Li Y
FAU - Liu, Jie
AU  - Liu J
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
EDAT- 2009/01/23 09:00
MHDA- 2009/01/23 09:01
CRDT- 2009/01/23 09:00
PHST- 2009/01/23 09:00 [entrez]
PHST- 2009/01/23 09:00 [pubmed]
PHST- 2009/01/23 09:01 [medline]
AID - 10.1021/nl803496s [pii]
AID - 10.1021/nl803496s [doi]
PST - ppublish
SO  - Nano Lett. 2009 Feb;9(2):800-5. doi: 10.1021/nl803496s.