PMID- 19206288
OWN - NLM
STAT- MEDLINE
DCOM- 20090306
LR  - 20091119
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 2
IP  - 12
DP  - 2008 Dec 23
TI  - Transformation of unipolar single-walled carbon nanotube field effect transistors 
      to ambipolar induced by polystyrene nanosphere assembly.
PG  - 2526-30
LID - 10.1021/nn800706v [doi]
AB  - We have fabricated single-walled carbon nanotube (SWNT) field effect transistors 
      (FETs) with molybdenum source and drain contacts. Normally, these devices operate 
      only as p-channel transistors, however, after polystyrene latex nanospheres were 
      attached to the nanotubes close to the contacts, they changed to ambipolar 
      operation. This strategy provides a simple method to modify the electrical 
      behavior of unipolar SWNT-FETs by influencing the gate-channel electric field 
      distribution and offset charge, so enabling complementary circuits to be 
      fabricated.
FAU - Wei, Di
AU  - Wei D
AD  - Electrical Engineering Division, Engineering Department, University of Cambridge, 
      9 JJ Thomson Avenue, Cambridge, U.K.
FAU - Zhang, Yan
AU  - Zhang Y
FAU - Yang, Yang
AU  - Yang Y
FAU - Hasko, David G
AU  - Hasko DG
FAU - Chu, DaPing
AU  - Chu D
FAU - Teo, Ken B K
AU  - Teo KB
FAU - Amaratunga, Gehan A J
AU  - Amaratunga GA
FAU - Milne, William I
AU  - Milne WI
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
RN  - 0 (Nanotubes, Carbon)
RN  - 0 (Polystyrenes)
RN  - 9003-53-6 (styrofoam)
SB  - IM
MH  - Nanospheres/*chemistry
MH  - Nanotubes, Carbon/*chemistry
MH  - Polystyrenes/*chemistry
MH  - *Transistors, Electronic
EDAT- 2009/02/12 09:00
MHDA- 2009/03/07 09:00
CRDT- 2009/02/12 09:00
PHST- 2009/02/12 09:00 [entrez]
PHST- 2009/02/12 09:00 [pubmed]
PHST- 2009/03/07 09:00 [medline]
AID - 10.1021/nn800706v [pii]
AID - 10.1021/nn800706v [doi]
PST - ppublish
SO  - ACS Nano. 2008 Dec 23;2(12):2526-30. doi: 10.1021/nn800706v.