PMID- 19420512
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20090624
LR  - 20090507
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 20
IP  - 13
DP  - 2009 Apr 1
TI  - Conductive atomic force microscopy studies on the transformation of GeSi quantum 
      dots to quantum rings.
PG  - 135703
LID - 10.1088/0957-4484/20/13/135703 [doi]
AB  - Conductive atomic force microscopy has been employed to study the topography and 
      conductance distribution of individual GeSi quantum dots (QDs) and quantum rings 
      (QRs) during the transformation from QDs to QRs by depositing an Si capping layer 
      on QDs. The current distribution changes significantly with the topographic 
      transformation during the Si capping process. Without the capping layer, the QDs 
      are dome-shaped and the conductance is higher at the ring region between the 
      center and boundary than that at the center. After capping with 0.32 nm Si, the 
      shape of the QDs changes to pyramidal and the current is higher at both the 
      center and the arris. When the Si capping layer increases to 2 nm, QRs are formed 
      and the current of individual QRs is higher at the rim than that at the central 
      hole. By comparing the composition distributions obtained by scanning Auger 
      microscopy and atomic force microscopy combined with selective chemical etching, 
      the origin of the current distribution change is discussed.
FAU - Zhang, S L
AU  - Zhang SL
AD  - Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 
      200433, People's Republic of China.
FAU - Xue, F
AU  - Xue F
FAU - Wu, R
AU  - Wu R
FAU - Cui, J
AU  - Cui J
FAU - Jiang, Z M
AU  - Jiang ZM
FAU - Yang, X J
AU  - Yang XJ
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20090311
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2009/05/08 09:00
MHDA- 2009/05/08 09:01
CRDT- 2009/05/08 09:00
PHST- 2009/05/08 09:00 [entrez]
PHST- 2009/05/08 09:00 [pubmed]
PHST- 2009/05/08 09:01 [medline]
AID - S0957-4484(09)02834-7 [pii]
AID - 10.1088/0957-4484/20/13/135703 [doi]
PST - ppublish
SO  - Nanotechnology. 2009 Apr 1;20(13):135703. doi: 10.1088/0957-4484/20/13/135703. 
      Epub 2009 Mar 11.