PMID- 19438022
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20090608
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 9
IP  - 4
DP  - 2009 Apr
TI  - High aspect-ratio ZnO nanowires based nanoscale field effect transistors.
PG  - 2692-7
AB  - High aspect-ratio ZnO nanowires were grown onto the copper foil, in a 
      large-quantity, by non-catalytic thermal evaporation method. The detailed 
      morphological observations revealed that the diameters and lengths of as-grown 
      nanowires are in the range of 60-100 nm and 10-30 microm, respectively exhibiting 
      a very high-aspect ratio. Detailed structural characterizations confirmed that 
      the as-grown nanowires are well crystalline and possess a wurtzite hexagonal 
      phase, grown along the c-axis direction in preference. The presence of a sharp 
      and strong UV emission at 381 nm in the room temperature photoluminescence (PL) 
      spectrum affirmed that the obtained nanowires have good optical properties. The 
      electrical transport properties of the as-grown nanowires was explored by 
      fabricating the field effect transistors (FETs) using a single ZnO nanowire. From 
      the fabricated single ZnO nanowire based FET, the electron carrier density and 
      field effect mobility were estimated to be approximately 6.7 x 10(13) cm(-3) and 
      approximately 3.8 cm2/Vs, respectively.
FAU - Umar, Ahmad
AU  - Umar A
AD  - School of Semiconductor and Chemical Engineering, BK21 Centre for Future Energy 
      Materials and Devices, and Nanomaterials Processing Research Center, Chonbuk 
      National University, Jeonju 561-756, South Korea.
FAU - Park, Y K
AU  - Park YK
FAU - Hahn, Y B
AU  - Hahn YB
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2009/05/15 09:00
MHDA- 2009/05/15 09:01
CRDT- 2009/05/15 09:00
PHST- 2009/05/15 09:00 [entrez]
PHST- 2009/05/15 09:00 [pubmed]
PHST- 2009/05/15 09:01 [medline]
AID - 10.1166/jnn.2009.460 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2009 Apr;9(4):2692-7. doi: 10.1166/jnn.2009.460.