PMID- 19441450
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20090604
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 9
IP  - 2
DP  - 2009 Feb
TI  - Noise in ZnO nanowire field effect transistors.
PG  - 1041-4
AB  - The noise power spectra in ZnO nanowire field effect transistors (FETs) were 
      experimentally investigated and showed a classical 1/f dependence. A Hooge's 
      constant of 5 x 10(-3) was estimated. This value is within the range reported for 
      CMOS FETs with high-k dielectrics, supporting the concept that nanowires can be 
      utilized for future beyond-CMOS electronic applications from the point of view of 
      device noise properties. ZnO FETs measured in a dry O2 environment displayed 
      elevated noise levels compared to in vacuum. At low temperature, random telegraph 
      signals are observed in the drain current.
FAU - Xiong, Hao D
AU  - Xiong HD
AD  - Semiconductor Electronics Division, National Institute of Standards and 
      Technology, 100 Bureau Drive, M.S. 8120, Gaithersburg, Maryland 20899-8120, USA.
FAU - Wang, Wenyong
AU  - Wang W
FAU - Suehle, John S
AU  - Suehle JS
FAU - Richter, Curt A
AU  - Richter CA
FAU - Hong, Woong-Ki
AU  - Hong WK
FAU - Lee, Takhee
AU  - Lee T
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2009/05/16 09:00
MHDA- 2009/05/16 09:01
CRDT- 2009/05/16 09:00
PHST- 2009/05/16 09:00 [entrez]
PHST- 2009/05/16 09:00 [pubmed]
PHST- 2009/05/16 09:01 [medline]
AID - 10.1166/jnn.2009.c082 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2009 Feb;9(2):1041-4. doi: 10.1166/jnn.2009.c082.