PMID- 19441593
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20090604
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 9
IP  - 2
DP  - 2009 Feb
TI  - Monte Carlo simulation of scanning electron microscope image of sidewall shape 
      for linewidth measurement.
PG  - 1655-8
AB  - Scanning electron microscope (SEM) has been an important tool for the observation 
      of surface micro-structures of various kinds of materials. The secondary electron 
      image, which uses secondary electrons that escaped from the surface under a 
      primary electron beam bombardment as imaging signals, can provide the surface 
      topographic information with a resolution up to sub-nm with a modern SEM. 
      Therefore, it can be used for nanometrology with improved measurement accuracy by 
      critical dimension scanning electron microscope (CD-SEM). This work aims to 
      develop a Monte Carlo simulation method for application to the nanometer 
      linewidth measurement for semiconductor devices by SEM. The simulation will 
      provide a theoretical analysis of the influence of various parameters of specimen 
      and electron beam on the estimation of linewidth and the sidewall angles. The 
      result will be helpful for the improvement of the measurement precision by 
      CD-SEM.
FAU - Xiao, S M
AU  - Xiao SM
AD  - Hefei National Laboratory for Physical Sciences at Microscale and Department of 
      Physics, University of Science and Technology of China, Hefei, Anhui 230026, 
      China.
FAU - Zhang, Z M
AU  - Zhang ZM
FAU - Li, H M
AU  - Li HM
FAU - Ding, Z J
AU  - Ding ZJ
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2009/05/16 09:00
MHDA- 2009/05/16 09:01
CRDT- 2009/05/16 09:00
PHST- 2009/05/16 09:00 [entrez]
PHST- 2009/05/16 09:00 [pubmed]
PHST- 2009/05/16 09:01 [medline]
AID - 10.1166/jnn.2009.c225 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2009 Feb;9(2):1655-8. doi: 10.1166/jnn.2009.c225.