PMID- 19495304
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20121002
LR  - 20190516
IS  - 1094-4087 (Electronic)
IS  - 1094-4087 (Linking)
VI  - 13
IP  - 11
DP  - 2005 May 30
TI  - Practical photoluminescence and photoreflectance spectroscopic system for optical 
      characterization of semiconductor devices.
PG  - 3951-60
AB  - We present a practical experimental design for performing photoluminescence (PL) 
      and photoreflectance (PR) measurements of semiconductors with only one PL 
      spectroscopic system. The measurement setup is more cost efficient than typical 
      PL-plus-PR systems. The design of the experimental setup of the PL-PR system is 
      described in detail. Measurements of two actual device structures, a 
      high-electron-mobility transistor (HEMT) and a double heterojunction-bipolar 
      transistor (DHBT), are carried out by using this design. The experimental PL and 
      PR spectra of the HEMT device, as well as polarized-photoreflectance (PPR) 
      spectra of the DHBT structure, are analyzed in detailed and discussed. The 
      experimental analyses demonstrate the well-behaved performance of this PL-PR 
      design.
FAU - Ho, Ching-Hwa
AU  - Ho CH
FAU - Huang, Kuo-Wei
AU  - Huang KW
FAU - Lin, Yu-Shyan
AU  - Lin YS
FAU - Lin, Der-Yuh
AU  - Lin DY
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Opt Express
JT  - Optics express
JID - 101137103
EDAT- 2005/05/30 00:00
MHDA- 2005/05/30 00:01
CRDT- 2009/06/05 09:00
PHST- 2009/06/05 09:00 [entrez]
PHST- 2005/05/30 00:00 [pubmed]
PHST- 2005/05/30 00:01 [medline]
AID - 84095 [pii]
AID - 10.1364/opex.13.003951 [doi]
PST - ppublish
SO  - Opt Express. 2005 May 30;13(11):3951-60. doi: 10.1364/opex.13.003951.