PMID- 19560779
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20091221
LR  - 20090817
IS  - 1095-7103 (Electronic)
IS  - 0021-9797 (Linking)
VI  - 338
IP  - 1
DP  - 2009 Oct 1
TI  - Mono-distributed single-walled carbon nanotube channel in field effect 
      transistors (FETs) using electrostatic atomization deposition.
PG  - 266-9
LID - 10.1016/j.jcis.2009.06.003 [doi]
AB  - This communication reports on the novel work of creating a transistor channel 
      based on functionalized single-walled carbon nanotubes (SWNTs) via electrostatic 
      atomization deposition. The current method of drop-cast though convenient was 
      unable to produce replicable transistor device due to its inherent inability in 
      controlling the volume of liquid being drop-cast. Hence, this method of 
      electrostatic atomization was introduced to consistently obtain a uniformly 
      distributed SWNT channel resulting in a good transistor device.
FAU - Fam, D W H
AU  - Fam DW
AD  - School of Materials Science and Engineering, Nanyang Technological University, 
      Block No. 4.1, 50 Nanyang Avenue, Singapore 639798, Singapore.
FAU - Tok, A I Y
AU  - Tok AI
LA  - eng
PT  - Journal Article
DEP - 20090606
PL  - United States
TA  - J Colloid Interface Sci
JT  - Journal of colloid and interface science
JID - 0043125
EDAT- 2009/06/30 09:00
MHDA- 2009/06/30 09:01
CRDT- 2009/06/30 09:00
PHST- 2008/08/07 00:00 [received]
PHST- 2009/05/27 00:00 [revised]
PHST- 2009/06/02 00:00 [accepted]
PHST- 2009/06/30 09:00 [entrez]
PHST- 2009/06/30 09:00 [pubmed]
PHST- 2009/06/30 09:01 [medline]
AID - S0021-9797(09)00744-9 [pii]
AID - 10.1016/j.jcis.2009.06.003 [doi]
PST - ppublish
SO  - J Colloid Interface Sci. 2009 Oct 1;338(1):266-9. doi: 
      10.1016/j.jcis.2009.06.003. Epub 2009 Jun 6.