PMID- 19567960
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20090922
LR  - 20090701
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 20
IP  - 29
DP  - 2009 Jul 22
TI  - Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si 
      nanowire FETs.
PG  - 295202
LID - 10.1088/0957-4484/20/29/295202 [doi]
AB  - We present numerical simulations of gate-all-around (GAA) 3C-SiC and Si nanowire 
      (NW) field effect transistors (FETs) using a full quantum self-consistent 
      Poisson-Schrodinger algorithm within the non-equilibrium Green's function (NEGF) 
      formalism. A direct comparison between Si and 3C-SiC device performances sheds 
      some light on the different transport properties of the two materials. Effective 
      mobility extraction has been performed in a linear transport regime and both 
      phonon- (PH) and surface-roughness-(SR) limited mobility values were computed. 
      3C-SiC FETs present stronger acoustic phonon scattering, due to a larger 
      deformation potential, resulting in lower phonon-limited mobility values. 
      Although Si NW devices reveal a slightly better electrostatic control compared to 
      3C-SiC ones, SR-limited mobility shows a slower degradation with increasing 
      charge density for 3C-SiC devices. This implies that the difference between Si 
      and 3C-SiC device mobility is reduced at large gate voltages. 3C-SiC nanowires, 
      besides their advantages compared to silicon ones, present electrical transport 
      properties that are comparable to the Si case.
FAU - Rogdakis, K
AU  - Rogdakis K
AD  - IMEP-LAHC/INP Grenoble, MINATEC, 3 parvis Louis Neel, BP 257, F-38016 Grenoble, 
      France. rogdakik@minatec.inpg.fr
FAU - Poli, S
AU  - Poli S
FAU - Bano, E
AU  - Bano E
FAU - Zekentes, K
AU  - Zekentes K
FAU - Pala, M G
AU  - Pala MG
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20090701
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2009/07/02 09:00
MHDA- 2009/07/02 09:01
CRDT- 2009/07/02 09:00
PHST- 2009/07/02 09:00 [entrez]
PHST- 2009/07/02 09:00 [pubmed]
PHST- 2009/07/02 09:01 [medline]
AID - S0957-4484(09)13863-1 [pii]
AID - 10.1088/0957-4484/20/29/295202 [doi]
PST - ppublish
SO  - Nanotechnology. 2009 Jul 22;20(29):295202. doi: 10.1088/0957-4484/20/29/295202. 
      Epub 2009 Jul 1.