PMID- 19636094
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20091013
LR  - 20090731
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 20
IP  - 33
DP  - 2009 Aug 19
TI  - Attofarad resolution capacitance-voltage measurement of nanometer scale field 
      effect transistors utilizing ambient noise.
PG  - 335203
LID - 10.1088/0957-4484/20/33/335203 [doi]
AB  - A high resolution capacitance-voltage (C-V) characterization technique, enabling 
      direct measurement of electronic properties at the nanoscale in devices such as 
      nanowire field effect transistors (FETs) through the use of random fluctuations, 
      is described. The minimum noise level required for achieving sub-aF (10(-18) F) 
      resolution, the leveraging of stochastic resonance, and the effect of higher 
      levels of noise are illustrated through simulations. The non-linear 
      DeltaC(gate-source/drain)-V(gate) response of FETs is utilized to determine the 
      inversion layer capacitance (C(inv)) and carrier mobility. The technique is 
      demonstrated by extracting the carrier concentration and effective electron 
      mobility in a nanoscale Si FET with C(inv) = 60 aF.
FAU - Gokirmak, Ali
AU  - Gokirmak A
AD  - Department of Electrical and Computer Engineering, University of Connecticut, 
      Storrs, CT 06269, USA. gokirmak@engr.uconn.edu
FAU - Inaltekin, Hazer
AU  - Inaltekin H
FAU - Tiwari, Sandip
AU  - Tiwari S
LA  - eng
PT  - Journal Article
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20090728
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2009/07/29 09:00
MHDA- 2009/07/29 09:01
CRDT- 2009/07/29 09:00
PHST- 2009/07/29 09:00 [entrez]
PHST- 2009/07/29 09:00 [pubmed]
PHST- 2009/07/29 09:01 [medline]
AID - S0957-4484(09)14538-5 [pii]
AID - 10.1088/0957-4484/20/33/335203 [doi]
PST - ppublish
SO  - Nanotechnology. 2009 Aug 19;20(33):335203. doi: 10.1088/0957-4484/20/33/335203. 
      Epub 2009 Jul 28.