PMID- 19851550
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20100121
LR  - 20091023
IS  - 1463-9084 (Electronic)
IS  - 1463-9076 (Linking)
VI  - 11
IP  - 42
DP  - 2009 Nov 14
TI  - Spin-coated and PECVD low dielectric constant porous organosilicate films studied 
      by 1D and 2D solid-state NMR.
PG  - 9729-37
LID - 10.1039/b909654j [doi]
AB  - In the research field of the sub-65 nm semiconductor industry, organosilicate 
      SiOCH films with low dielectric constant (k < 2.4) need to be developed in order 
      to improve the performance of integrated circuits [International Roadmap for 
      Semiconductors (ITRS), San Jose, CA, 2004]. One way to produce SiOCH films of low 
      dielectric constant is to introduce pores into the film. This is usually obtained 
      in two steps. Firstly, co-deposition of a matrix precursor, with a sacrificial 
      organic porogen, either by plasma enhanced chemical vapor deposition (PECVD) or 
      spin-coating. Secondly, application of a specific thermal treatment to remove the 
      porogen and create the porosity. This last step can be improved by adding to the 
      thermal process a super-critical CO(2) treatment, an UV irradiation or an 
      electronic bombardment (e-beam). In this study, the two deposition processes as 
      well as the various treatments applied to eliminate the porogens were evaluated 
      and compared using high-resolution solid-state NMR. For this purpose, hybrid 
      (containing porogens) and porous films were extensively characterized on the 
      basis of their (1)H, (13)C and (29)Si high-resolution NMR spectra. Information 
      was obtained concerning the crosslinking of the Si skeleton. Spectral features 
      could be correlated to the processes used. Isotropic chemical shift analyses and 
      2D correlation NMR experiments were used to show the existence and nature of the 
      interactions between the matrix precursor and the organic porogen.
FAU - Gerbaud, Guillaume
AU  - Gerbaud G
AD  - CEA, INAC, SCIB (UMR-E3 UJF/CEA and FRE 3200 CNRS/CEA), Laboratoire de Resonances 
      Magnetiques, F-38054 Grenoble, France. guillaume.gerbaud@cea.fr
FAU - Hediger, Sabine
AU  - Hediger S
FAU - Bardet, Michel
AU  - Bardet M
FAU - Favennec, Laurent
AU  - Favennec L
FAU - Zenasni, Aziz
AU  - Zenasni A
FAU - Beynet, Julien
AU  - Beynet J
FAU - Gourhant, Olivier
AU  - Gourhant O
FAU - Jousseaume, Vincent
AU  - Jousseaume V
LA  - eng
PT  - Journal Article
DEP - 20090824
PL  - England
TA  - Phys Chem Chem Phys
JT  - Physical chemistry chemical physics : PCCP
JID - 100888160
EDAT- 2009/10/24 06:00
MHDA- 2009/10/24 06:01
CRDT- 2009/10/24 06:00
PHST- 2009/10/24 06:00 [entrez]
PHST- 2009/10/24 06:00 [pubmed]
PHST- 2009/10/24 06:01 [medline]
AID - 10.1039/b909654j [doi]
PST - ppublish
SO  - Phys Chem Chem Phys. 2009 Nov 14;11(42):9729-37. doi: 10.1039/b909654j. Epub 2009 
      Aug 24.