PMID- 19858553
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20100121
LR  - 20091030
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 20
IP  - 47
DP  - 2009 Nov 25
TI  - Tuning of operation mode of ZnO nanowire field effect transistors by 
      solvent-driven surface treatment.
PG  - 475702
LID - 10.1088/0957-4484/20/47/475702 [doi]
AB  - We report on the adjustment of the operation voltage in ZnO nanowire field effect 
      transistors (FETs) by a simple solvent treatment. We have observed that by 
      submerging ZnO nanowires in isopropyl alcohol (IPA), the surface of the ZnO 
      nanowires is etched, generating surface roughness, and their defect emission peak 
      becomes stronger. In particular, ZnO nanowire FETs before IPA treatment operate 
      in the depletion-mode, but are converted to the enhancement-mode with a positive 
      shift of threshold voltage after submersion in IPA. This solvent treatment can be 
      a useful method for controlling the operation mode of ZnO nanowire FETs for wide 
      applications of nanowire-based electronic devices and circuits.
FAU - Park, Woojin
AU  - Park W
AD  - Department of Nanobio Materials and Electronics, Gwangju Institute of Science and 
      Technology, Gwangju 500-712, Korea.
FAU - Hong, Woong-Ki
AU  - Hong WK
FAU - Jo, Gunho
AU  - Jo G
FAU - Wang, Gunuk
AU  - Wang G
FAU - Choe, Minhyeok
AU  - Choe M
FAU - Maeng, Jongsun
AU  - Maeng J
FAU - Kahng, Yung Ho
AU  - Kahng YH
FAU - Lee, Takhee
AU  - Lee T
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20091026
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2009/10/28 06:00
MHDA- 2009/10/28 06:01
CRDT- 2009/10/28 06:00
PHST- 2009/10/28 06:00 [entrez]
PHST- 2009/10/28 06:00 [pubmed]
PHST- 2009/10/28 06:01 [medline]
AID - S0957-4484(09)26390-2 [pii]
AID - 10.1088/0957-4484/20/47/475702 [doi]
PST - ppublish
SO  - Nanotechnology. 2009 Nov 25;20(47):475702. doi: 10.1088/0957-4484/20/47/475702. 
      Epub 2009 Oct 26.