PMID- 19908447
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20091203
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 9
IP  - 10
DP  - 2009 Oct
TI  - Single ZnO nanobelt based field effect transistors (FETs).
PG  - 5745-51
AB  - Electrical properties of single ZnO nanobelt have been examined by fabricating 
      single nanobelt based field effect transistors (FETs). The ZnO nanobelts were 
      grown via non-catalytic simple thermal evaporation process by using metallic zinc 
      powder in the presence of oxygen. The detailed structural and optical 
      characterizations confirmed that the grown nanobelts are well-crystalline with 
      the wurtzite hexagonal phase and exhibiting good optical properties. The 
      passivation effect on the electrical characteristics of the as-grown nanobelts 
      was also evaluated by passivating the fabricated FETs with polymethyl 
      methacrylate (PMMA). The passivated single ZnO nanobelt based FETs exhibited 
      higher electrical performance as compared to non-passivated FETs due to reduction 
      in the physically absorbed chemisorbed species such as O-, O2-, O2, or OH- etc. 
      The field effect mobility (micro(eff)) of the fabricated nanobelt based 
      non-passivated and passivated FETs was estimated to be approximately 21.3 and 59 
      cm2/V x s, respectively. Moreover the carrier concentration and peak 
      transconductance of the fabricated non-passivated and passivated FET were 
      calculated to be approximately 8.73 x 10(17) and approximately 1.86 x 10(18) 
      cm(-3) and approximately 0.76 and 1.4 microS, respectively. This work offers 
      substantial opportunities for further practical electronics and photonics 
      nanodevice applications of ZnO based nanostructures.
FAU - Park, Y K
AU  - Park YK
AD  - School of Semiconductor and Chemical Engineering, BK 21 Centre for Future Energy 
      Materials and Devices and Nanomaterials Processing Research Centre, Chonbuk 
      National University, Jeonju 561-756, South Korea.
FAU - Umar, Ahmad
AU  - Umar A
FAU - Lee, E W
AU  - Lee EW
FAU - Hong, D M
AU  - Hong DM
FAU - Hahn, Yoon-Bong
AU  - Hahn YB
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2009/11/17 06:00
MHDA- 2009/11/17 06:01
CRDT- 2009/11/14 06:00
PHST- 2009/11/14 06:00 [entrez]
PHST- 2009/11/17 06:00 [pubmed]
PHST- 2009/11/17 06:01 [medline]
AID - 10.1166/jnn.2009.1247 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2009 Oct;9(10):5745-51. doi: 10.1166/jnn.2009.1247.