PMID- 19908462
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20091203
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 9
IP  - 10
DP  - 2009 Oct
TI  - Single ZnO nanowire based high-performance field effect transistors (FETs).
PG  - 5839-44
AB  - The electrical properties of single ZnO nanowire were examined by fabricating 
      single nanowire based field effect transistors (FETs) via two approaches, i.e., 
      back- and top-gate approaches by using electron beam lithography (EBL) and 
      photolithography processes. The ZnO nanowires were synthesized by non-catalytic 
      simple thermal evaporation process by using metallic zinc powder in the presence 
      of oxygen. The as-grown ZnO nanowires were characterized in terms of their 
      structural and optical properties which confirmed that the grown nanowires are 
      well-crystallized with the wurtzite hexagonal phase and exhibiting good optical 
      properties. The peak transconductances of the back- and top-gate FETs were 
      approximately 3.2 and approximately 7.4 nS, respectively. The field effect 
      mobilities (micro(eff)) for the back- and top-gate FETs were measured to be 3.4 
      and 7.87 cm2/V x s, respectively. Our studies conclude that the fabricated 
      top-gate FETs exhibited higher and good electrical properties as compared to ZnO 
      nanowire FETs fabricated using back-gate approaches.
FAU - Park, Yong Kyu
AU  - Park YK
AD  - School of Semiconductor and Chemical Engineering, BK21 Centre for Future Energy 
      Materials and Devices, Nanomaterials Processing Research Centre, Chonbuk National 
      University, Jeonju 561756, South Korea.
FAU - Umar, Ahmad
AU  - Umar A
FAU - Kim, Jin-Seok
AU  - Kim JS
FAU - Yang, H Y
AU  - Yang HY
FAU - Lee, Jeong Su
AU  - Lee JS
FAU - Hahn, Yoon-Bong
AU  - Hahn YB
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2009/11/17 06:00
MHDA- 2009/11/17 06:01
CRDT- 2009/11/14 06:00
PHST- 2009/11/14 06:00 [entrez]
PHST- 2009/11/17 06:00 [pubmed]
PHST- 2009/11/17 06:01 [medline]
AID - 10.1166/jnn.2009.1252 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2009 Oct;9(10):5839-44. doi: 10.1166/jnn.2009.1252.