PMID- 19928282
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20150408
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 9
IP  - 9
DP  - 2009 Sep
TI  - Electrical and hydrogen-sensing characteristics of field effect transistors based 
      on nanorods of ZnO and WO2.72.
PG  - 5652-8
AB  - Top-gated field effect transistors (FETs) using Au-gap (5 microm) electrodes on 
      glass substrate and SiO2/Si as gate have been fabricated with undoped and doped 
      nanorods of ZnO as well as with WO2.72 nanorods as active semiconductor elements. 
      The I-V characteristics at different gate voltages show that the nanorods are 
      n-type semiconductors and the derived transfer characteristics show that the FET 
      devices function in the depletion mode. Al-doping (3 at%) enhances the carrier 
      mobility of ZnO nanorods to 128.6 cm2/V x s as against to 0.009 cm2/V x s 
      estimated in the case of the undoped nanorods. Doping with Cd and Mg (3 at%) as 
      well as N (approximately 1 at%) similarly increases the mobility although to a 
      smaller extent. The Cd-doped ZnO nanorods exhibit the high sensitivity (defined 
      as the ratio of the resistance in air to that in the hydrogen) (20) for 1000 ppm 
      of hydrogen. Application of gate voltage decreases the recovery times of the 
      nanorod sensors. FETs based on WO2.72 nanorods also show the depletion mode type 
      characteristics and a carrier mobility of 8.38 cm2/V x s is obtained. The WO2.72 
      based FETs exhibit good sensitivity (approximately 10) for 1000 ppm hydrogen.
FAU - Rout, Chandra Sekhar
AU  - Rout CS
AD  - Chemistry and Physics of Materials Unit, DST Unit on Nanoscience and CSIR Centre 
      of Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific 
      Research, Jakkur P.O., Bangalore 560064, India.
FAU - Kulkarni, G U
AU  - Kulkarni GU
FAU - Rao, C N R
AU  - Rao CN
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2009/11/26 06:00
MHDA- 2009/11/26 06:01
CRDT- 2009/11/26 06:00
PHST- 2009/11/26 06:00 [entrez]
PHST- 2009/11/26 06:00 [pubmed]
PHST- 2009/11/26 06:01 [medline]
AID - 10.1166/jnn.2009.1179 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2009 Sep;9(9):5652-8. doi: 10.1166/jnn.2009.1179.