PMID- 19995085
OWN - NLM
STAT- MEDLINE
DCOM- 20100222
LR  - 20200930
IS  - 1530-6992 (Electronic)
IS  - 1530-6984 (Linking)
VI  - 9
IP  - 12
DP  - 2009 Dec
TI  - Y-contacted high-performance n-type single-walled carbon nanotube field-effect 
      transistors: scaling and comparison with Sc-contacted devices.
PG  - 4209-14
LID - 10.1021/nl9024243 [doi]
AB  - While it has been shown that scandium (Sc) can be used for making high-quality 
      Ohmic contact to the conduction band of a carbon nanotube (CNT) and thus for 
      fabricating high-performance n-type CNT field effect transistors (FETs), the cost 
      for metal Sc is currently five times more expensive than that for gold and one 
      thousand times more expensive than for yttrium (Y) which in many ways resembles 
      Sc. In this Letter we show that near perfect contacts can be fabricated on 
      single-walled CNTs (SWCNTs) using Y, and the Y-contacted CNT FETs outperform the 
      Sc-contacted CNT FETs in many important aspects. Low-temperature measurements on 
      Y-contacted devices reveal that linear output characteristics persist down to 4.3 
      K, suggesting that Y makes a perfect Ohmic contact with the conduction band of 
      the CNT. Self-aligned top-gate devices have been fabricated, showing high 
      performance approaching the theoretical limit of CNT-based devices. In particular 
      a room temperature conductance of about 0.55G(0) (with G(0) = 4e(2)/h being the 
      quantum conductance limit of the SWCNT), threshold swing of 73 mV/decade, 
      electron mobility of 5100 cm(2)/V.s, and mean free length of up to 0.639 mum have 
      been achieved. Gate length scaling behavior of the Y-contacted CNT FETs is also 
      investigated, revealing a more favorable energy consumption and faster intrinsic 
      speed scaling than that of the Si-based devices.
FAU - Ding, Li
AU  - Ding L
AD  - Department of Electronics, Key Laboratory for the Physics and Chemistry of 
      Nanodevices, Peking University, Beijing 100871, China.
FAU - Wang, Sheng
AU  - Wang S
FAU - Zhang, Zhiyong
AU  - Zhang Z
FAU - Zeng, Qingsheng
AU  - Zeng Q
FAU - Wang, Zhenxing
AU  - Wang Z
FAU - Pei, Tian
AU  - Pei T
FAU - Yang, Leijing
AU  - Yang L
FAU - Liang, Xuelei
AU  - Liang X
FAU - Shen, Jun
AU  - Shen J
FAU - Chen, Qing
AU  - Chen Q
FAU - Cui, Rongli
AU  - Cui R
FAU - Li, Yan
AU  - Li Y
FAU - Peng, Lian-Mao
AU  - Peng LM
LA  - eng
PT  - Comparative Study
PT  - Evaluation Study
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
RN  - 0 (Nanotubes, Carbon)
RN  - 58784XQC3Y (Yttrium)
RN  - YUJ4U1EW7R (Scandium)
SB  - IM
MH  - Electric Conductivity
MH  - Equipment Design
MH  - Equipment Failure Analysis
MH  - Materials Testing
MH  - *Microelectrodes
MH  - Nanotechnology/*instrumentation
MH  - Nanotubes, Carbon/*chemistry/ultrastructure
MH  - Scandium/*chemistry
MH  - *Transistors, Electronic
MH  - Yttrium/*chemistry
EDAT- 2009/12/10 06:00
MHDA- 2010/02/23 06:00
CRDT- 2009/12/10 06:00
PHST- 2009/12/10 06:00 [entrez]
PHST- 2009/12/10 06:00 [pubmed]
PHST- 2010/02/23 06:00 [medline]
AID - 10.1021/nl9024243 [doi]
PST - ppublish
SO  - Nano Lett. 2009 Dec;9(12):4209-14. doi: 10.1021/nl9024243.