PMID- 20112950
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20100507
LR  - 20100223
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 4
IP  - 2
DP  - 2010 Feb 23
TI  - Tuning of the electronic characteristics of ZnO nanowire field effect transistors 
      by proton irradiation.
PG  - 811-8
LID - 10.1021/nn9014246 [doi]
AB  - We demonstrated a controllable tuning of the electronic characteristics of ZnO 
      nanowire field effect transistors (FETs) using a high-energy proton beam. After a 
      short proton irradiation time, the threshold voltage shifted to the negative gate 
      bias direction with an increase in the electrical conductance, whereas the 
      threshold voltage shifted to the positive gate bias direction with a decrease in 
      the electrical conductance after a long proton irradiation time. The electrical 
      characteristics of two different types of ZnO nanowires FET device structures in 
      which the ZnO nanowires are placed on the substrate or suspended above the 
      substrate and photoluminescence (PL) studies of the ZnO nanowires provide 
      substantial evidence that the experimental observations result from the 
      irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire 
      interface, which can be explained by a surface-band-bending model in terms of 
      gate electric field modulation. Our study on the proton-irradiation-mediated 
      functionalization can be potentially interesting not only for understanding the 
      proton irradiation effects on nanoscale devices, but also for creating the 
      property-tailored nanoscale devices.
FAU - Hong, Woong-Ki
AU  - Hong WK
AD  - Department of Materials Science and Engineering, Gwangju Institute of Science and 
      Technology, Gwangju 500-712, Korea.
FAU - Jo, Gunho
AU  - Jo G
FAU - Sohn, Jung Inn
AU  - Sohn JI
FAU - Park, Woojin
AU  - Park W
FAU - Choe, Minhyeok
AU  - Choe M
FAU - Wang, Gunuk
AU  - Wang G
FAU - Kahng, Yung Ho
AU  - Kahng YH
FAU - Welland, Mark E
AU  - Welland ME
FAU - Lee, Takhee
AU  - Lee T
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
EDAT- 2010/02/02 06:00
MHDA- 2010/02/02 06:01
CRDT- 2010/02/02 06:00
PHST- 2010/02/02 06:00 [entrez]
PHST- 2010/02/02 06:00 [pubmed]
PHST- 2010/02/02 06:01 [medline]
AID - 10.1021/nn9014246 [doi]
PST - ppublish
SO  - ACS Nano. 2010 Feb 23;4(2):811-8. doi: 10.1021/nn9014246.