PMID- 20157234
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20100507
LR  - 20100219
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 21
IP  - 10
DP  - 2010 Mar 12
TI  - Time-resolved photoluminescence investigations on HfO2-capped InP nanowires.
PG  - 105711
LID - 10.1088/0957-4484/21/10/105711 [doi]
AB  - We have employed time-resolved photoluminescence (PL) spectroscopy to study the 
      impact of HfO(2) surface capping by atomic layer deposition (ALD) on the optical 
      properties of InP nanowires (NWs). The deposition of high-kappa dielectrics 
      acting as a gate oxide is of particular interest in view of possible applications 
      of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high 
      number of charged states at the NW-dielectrics interface can strongly degrade the 
      performance of the FET which explains the strong interest in high quality 
      deposition of high-kappa dielectrics. In the present work we show that 
      time-resolved spectroscopy is a valuable and direct tool to monitor the surface 
      quality of HfO(2)-capped InP NWs. In particular, we have studied the impact of 
      ALD process parameters as well as surface treatment prior to the oxide capping on 
      the NW-dielectrics interface quality. The best results in terms of the surface 
      recombination velocity (S(0) = 9.5 x 10(3) cm s(-1)) were obtained for InP/GaP 
      core/shell NWs in combination with a low temperature (100 degrees C) ALD process. 
      While the present report focuses on the InP material system, our method of 
      addressing the surface treatment for semiconductors with high-kappa dielectrics 
      will also be applicable to nanoelectronic devices based on other III/V material 
      systems such as InAs.
FAU - Munch, S
AU  - Munch S
AD  - Technische Physik, Physikalisches Institut and Wilhelm Conrad Rontgen Research 
      Center for Complex Material Systems, Am Hubland, D-97074 Wurzburg, Germany. 
      steffen.muench@physik.uni-wuerzburg.de
FAU - Reitzenstein, S
AU  - Reitzenstein S
FAU - Borgstrom, M
AU  - Borgstrom M
FAU - Thelander, C
AU  - Thelander C
FAU - Samuelson, L
AU  - Samuelson L
FAU - Worschech, L
AU  - Worschech L
FAU - Forchel, A
AU  - Forchel A
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20100216
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2010/02/17 06:00
MHDA- 2010/02/17 06:01
CRDT- 2010/02/17 06:00
PHST- 2010/02/17 06:00 [entrez]
PHST- 2010/02/17 06:00 [pubmed]
PHST- 2010/02/17 06:01 [medline]
AID - S0957-4484(10)39882-5 [pii]
AID - 10.1088/0957-4484/21/10/105711 [doi]
PST - ppublish
SO  - Nanotechnology. 2010 Mar 12;21(10):105711. doi: 10.1088/0957-4484/21/10/105711. 
      Epub 2010 Feb 16.