PMID- 20208121
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20100609
LR  - 20100317
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 21
IP  - 13
DP  - 2010 Apr 2
TI  - Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using 
      chlorine ICP etching with N2-promoted passivation.
PG  - 134014
LID - 10.1088/0957-4484/21/13/134014 [doi]
AB  - Semiconductor nanowaveguides are the key structure for light-guiding 
      nanophotonics applications. Efficient guiding and confinement of single-mode 
      light in these waveguides require high aspect ratio geometries. In these 
      conditions, sidewall verticality becomes crucial. We fabricated such structures 
      using a top-down process combining electron beam lithography and inductively 
      coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs semiconductors with Al 
      concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma etching was a 
      single-step process using a Cl(2)/BCl(3)/Ar gas mixture with various fractions of 
      N(2). Scanning electron microscope (SEM) observations showed that the presence of 
      nitrogen generated the deposition of a passivation layer, which had a significant 
      effect on sidewall slope. Near-ideal vertical sidewalls were obtained over a very 
      narrow range of N(2), allowing the production of extremely high aspect ratios 
      (>32) for 80 nm wide nanowaveguides.
FAU - Volatier, Maite
AU  - Volatier M
AD  - Centre de Recherche en Nanofabrication et en Nanocaracterisation (CRN2), 
      Universite de Sherbrooke, Sherbrooke, QC, Canada.
FAU - Duchesne, David
AU  - Duchesne D
FAU - Morandotti, Roberto
AU  - Morandotti R
FAU - Ares, Richard
AU  - Ares R
FAU - Aimez, Vincent
AU  - Aimez V
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20100308
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2010/03/09 06:00
MHDA- 2010/03/09 06:01
CRDT- 2010/03/09 06:00
PHST- 2010/03/09 06:00 [entrez]
PHST- 2010/03/09 06:00 [pubmed]
PHST- 2010/03/09 06:01 [medline]
AID - S0957-4484(10)30129-2 [pii]
AID - 10.1088/0957-4484/21/13/134014 [doi]
PST - ppublish
SO  - Nanotechnology. 2010 Apr 2;21(13):134014. doi: 10.1088/0957-4484/21/13/134014. 
      Epub 2010 Mar 8.