PMID- 20355371 OWN - NLM STAT- MEDLINE DCOM- 20100503 LR - 20191210 IS - 1533-4880 (Print) IS - 1533-4880 (Linking) VI - 10 IP - 6 DP - 2010 Jun TI - Fabrication process of carbon nanotube field effect transistors using atomic layer deposition passivation for biosensors. PG - 3805-9 AB - Fabrication process of the carbon nanotube (CNT) field effect transistors (FETs) for biosensors was studied. Atomic layer deposition (ALD) of HfO2 was applied to the deposition of the passivation/gate insulator film. The CNT-FETs did not show the drain current degradation after ALD passivation even though the passivation by Si3N4 deposited by plasma-enhanced chemical vapor deposition (PECVD) resulted in a significant drain current decrease. This indicates the advantage of the present ALD technique in terms of the damage suppression. The biosensing operation was confirmed using thus fabricated CNT-FETs. FAU - Nakashima, Yasuhiro AU - Nakashima Y AD - Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusaku, Nagoya 464-8603, Japan. FAU - Ohno, Yutaka AU - Ohno Y FAU - Kishimoto, Shigeru AU - Kishimoto S FAU - Okochi, Mina AU - Okochi M FAU - Honda, Hiroyuki AU - Honda H FAU - Mizutani, Takashi AU - Mizutani T LA - eng PT - Evaluation Study PT - Journal Article PT - Research Support, Non-U.S. Gov't PL - United States TA - J Nanosci Nanotechnol JT - Journal of nanoscience and nanotechnology JID - 101088195 RN - 0 (Macromolecular Substances) RN - 0 (Nanotubes, Carbon) SB - IM MH - Biosensing Techniques/*instrumentation MH - Crystallization/methods MH - Equipment Design MH - Equipment Failure Analysis MH - Macromolecular Substances/chemistry MH - Materials Testing MH - Molecular Conformation MH - Nanotechnology/methods MH - Nanotubes, Carbon/*chemistry/*ultrastructure MH - Particle Size MH - Surface Properties MH - *Transistors, Electronic EDAT- 2010/04/02 06:00 MHDA- 2010/05/04 06:00 CRDT- 2010/04/02 06:00 PHST- 2010/04/02 06:00 [entrez] PHST- 2010/04/02 06:00 [pubmed] PHST- 2010/05/04 06:00 [medline] AID - 10.1166/jnn.2010.1983 [doi] PST - ppublish SO - J Nanosci Nanotechnol. 2010 Jun;10(6):3805-9. doi: 10.1166/jnn.2010.1983.