PMID- 20355491
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20100526
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 10
IP  - 4
DP  - 2010 Apr
TI  - Role of nitrogen additive and temperature on growth of diamond films from 
      nanocrystalline to polycrystalline.
PG  - 2722-30
AB  - In this work, the coupled effect of nitrogen addition into CH4/H2 mixtures and 
      surface temperature on diamond growth ranging from large grained polycrystalline 
      to fine-grained nanocrystalline were investigated. Moreover a new growth 
      parameter window for simultaneous growth of nanocrystalline diamond (NCD) and 
      100 textured large-grained diamond films was developed by using a high power 
      high pressure 5 kW microwave plasma assisted chemical vapor deposition (MPCVD) 
      reactor. Scanning electron microscope (SEM), Raman spectroscopy, and X-ray 
      diffraction (XRD) are employed to characterize the morphology, crystalline 
      quality and texture of the diamond samples. Our results can be grouped by two 
      catalogs: First, deposition run without and with 0.24% N2 addition, while keeping 
      all the other parameters constant, resulted in a high quality transparent 
      large-grained polycrystalline diamond film and a NCD film, respectively. This 
      result clearly evidences nitrogen induced nanocrystallinity. Then, two different 
      substrate surface temperatures were obtained by overlapping a small silicon slice 
      on the top centre of a large silicon wafer of 5.08 cm in diameter in only one 
      deposition run using 0.24% N2 addition and the same set of parameters as the 
      previous runs. From this growth run, a NCD film of growth rate around 2.3 
      microm/h was obtained at low temperature, while a 100 textured large-grained 
      diamond film of much higher growth rate about 10.4 microm/h was grown at high 
      temperature. These results not only confirm the reproducibility of NCD by N2 
      addition, but also indicate that distinct growth modes were involved at different 
      substrate temperatures with 0.24% nitrogen addition, or coupled effect of 
      nitrogen addition and temperature on the growth of CVD diamond films happened. 
      Finite element method (FEM) analysis was employed to simulate the temperature 
      gradient and distribution on these two samples, and based on this simulation and 
      other simulation results in the literature, the growth mechanism is briefly 
      discussed.
FAU - Chunjiu, Tang
AU  - Chunjiu T
AD  - Center for Mechanical Technology and Automation, and Department of Mechanical 
      Engineering, University of Aveiro, 3810 Aveiro, Portugal.
FAU - Jose, Gracio
AU  - Jose G
FAU - Neves, A J
AU  - Neves AJ
FAU - Hugo, Calisto
AU  - Hugo C
FAU - Fernandes, A J S
AU  - Fernandes AJ
FAU - Lianshe, Fu
AU  - Lianshe F
FAU - Sergio, Pereira
AU  - Sergio P
FAU - Liping, Gu
AU  - Liping G
FAU - Gil, Cabral
AU  - Gil C
FAU - Carmo, M C
AU  - Carmo MC
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2010/04/02 06:00
MHDA- 2010/04/02 06:01
CRDT- 2010/04/02 06:00
PHST- 2010/04/02 06:00 [entrez]
PHST- 2010/04/02 06:00 [pubmed]
PHST- 2010/04/02 06:01 [medline]
AID - 10.1166/jnn.2010.1450 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2010 Apr;10(4):2722-30. doi: 10.1166/jnn.2010.1450.