PMID- 20358943
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20100519
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 10
IP  - 5
DP  - 2010 May
TI  - Optimum condition of anisotropic plasma etching for improving bending properties 
      of ionic polymer-metal composites.
PG  - 3299-303
AB  - We presented an anisotropic plasma etching technique by reactive ion etcher (RIE) 
      as a new pretreatment method of fabrication of ionic polymer-metal composite 
      (IPMC). We already found that the new technique provided large displacement to 
      the fabricated IPMC in the presence of low applied voltage. However, we did not 
      examine the optimum condition for the anisotropic plasma etching. In this 
      research, we tried to figure out optimum treatment condition of film in etcher. 
      Nafion (by DuPont) films were etched using various etching time and shadow masks 
      with various slit and space sizes. The etched samples were plated with Pt at top 
      and bottom side by Oguro's reduction method. The surface morphology of fabricated 
      IPMCs was characterized by SEM. And, we've measured surface resistance, bending 
      displacement, and driving force in order to check the IPMC properties out. Here, 
      we found that optimum condition for pre-treatment of Nafion was 1 min for etching 
      time under shadow mask with 200 microm slit and 100 microm space.
FAU - Choi, N J
AU  - Choi NJ
AD  - Nano Convergence Sensor Team, NT Convergence Components Research Department, 
      Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
FAU - Lee, H K
AU  - Lee HK
FAU - Jung, S
AU  - Jung S
FAU - Park, K H
AU  - Park KH
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2010/04/03 06:00
MHDA- 2010/04/03 06:01
CRDT- 2010/04/03 06:00
PHST- 2010/04/03 06:00 [entrez]
PHST- 2010/04/03 06:00 [pubmed]
PHST- 2010/04/03 06:01 [medline]
AID - 10.1166/jnn.2010.2240 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2010 May;10(5):3299-303. doi: 10.1166/jnn.2010.2240.