PMID- 20384350
OWN - NLM
STAT- MEDLINE
DCOM- 20100913
LR  - 20200930
IS  - 1530-6992 (Electronic)
IS  - 1530-6984 (Linking)
VI  - 10
IP  - 5
DP  - 2010 May 12
TI  - Correlating the nanostructure and electronic properties of InAs nanowires.
PG  - 1618-22
LID - 10.1021/nl904053j [doi]
AB  - The electronic properties and nanostructure of InAs nanowires are correlated by 
      creating multiple field effect transistors (FETs) on nanowires grown to have low 
      and high defect density segments. 4.2 K carrier mobilities are approximately 4x 
      larger in the nominally defect free segments of the wire. We also find that dark 
      field optical intensity is correlated with the mobility, suggesting a simple 
      route for selecting wires with a low defect density. At low temperatures, FETs 
      fabricated on high defect density segments of InAs nanowires showed transport 
      properties consistent with single electron charging, even on devices with low 
      resistance ohmic contacts. The charging energies obtained suggest quantum dot 
      formation at defects in the wires. These results reinforce the importance of 
      controlling the defect density in order to produce high quality electrical and 
      optical devices using InAs nanowires.
FAU - Schroer, M D
AU  - Schroer MD
AD  - Department of Physics, Princeton University, Princeton, New Jersey 08544, USA.
FAU - Petta, J R
AU  - Petta JR
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PT  - Research Support, U.S. Gov't, Non-P.H.S.
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
RN  - 0 (Arsenicals)
RN  - 0 (Macromolecular Substances)
RN  - 045A6V3VFX (Indium)
RN  - J1A23S0911 (indium arsenide)
SB  - IM
MH  - Arsenicals/*chemistry
MH  - Crystallization/*methods
MH  - Equipment Design
MH  - Equipment Failure Analysis
MH  - Indium/*chemistry
MH  - Macromolecular Substances/chemistry
MH  - Materials Testing
MH  - Molecular Conformation
MH  - Nanostructures/*chemistry/*ultrastructure
MH  - Nanotechnology/*instrumentation
MH  - Particle Size
MH  - Surface Properties
MH  - *Transistors, Electronic
EDAT- 2010/04/14 06:00
MHDA- 2010/09/14 06:00
CRDT- 2010/04/14 06:00
PHST- 2010/04/14 06:00 [entrez]
PHST- 2010/04/14 06:00 [pubmed]
PHST- 2010/09/14 06:00 [medline]
AID - 10.1021/nl904053j [doi]
PST - ppublish
SO  - Nano Lett. 2010 May 12;10(5):1618-22. doi: 10.1021/nl904053j.