PMID- 20588619
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20100929
LR  - 20181023
IS  - 1094-4087 (Electronic)
IS  - 1094-4087 (Linking)
VI  - 18
IP  - 8
DP  - 2010 Apr 12
TI  - Numerical study on heterodyne terahertz detection in field effect transistor.
PG  - 7782-9
LID - 10.1364/OE.18.007782 [doi]
AB  - Numerical method on the heterodyne terahertz detection characteristics of field 
      effect characteristics of field effect transistors is studied in this paper which 
      is based on the hydrodynamic equations which govern the terahertz signal 
      transport in field effect transistors (FETs). A modification is made in an 
      existed numerical tool established by our group by coupling the heterodyne 
      characteristics. This modified numerical tool work well in all operation regions 
      of FETs from sub-threshold to strong inversion and from linear to saturation. And 
      the results are used to demonstrate the potential for using MOS transistors as 
      THz detectors and investigate the optimization of the device structure.
FAU - Yan, Zhifeng
AU  - Yan Z
AD  - The Key Laboratory of Integrated Microsystems, School of Computer & Information 
      Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, P R 
      China.
FAU - Zhu, Jingxuan
AU  - Zhu J
FAU - Wang, Yinglei
AU  - Wang Y
FAU - Lin, Xinnan
AU  - Lin X
FAU - He, Jin
AU  - He J
FAU - Cao, Juncheng
AU  - Cao J
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - Opt Express
JT  - Optics express
JID - 101137103
EDAT- 2010/07/01 06:00
MHDA- 2010/07/01 06:01
CRDT- 2010/07/01 06:00
PHST- 2010/07/01 06:00 [entrez]
PHST- 2010/07/01 06:00 [pubmed]
PHST- 2010/07/01 06:01 [medline]
AID - 196937 [pii]
AID - 10.1364/OE.18.007782 [doi]
PST - ppublish
SO  - Opt Express. 2010 Apr 12;18(8):7782-9. doi: 10.1364/OE.18.007782.