PMID- 20595187
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20101213
LR  - 20100809
IS  - 1477-9986 (Electronic)
IS  - 0022-0744 (Linking)
VI  - 59 Suppl 1
DP  - 2010 Aug
TI  - Scanning electron microscope observation of dislocations in semiconductor and 
      metal materials.
PG  - S175-81
LID - 10.1093/jmicro/dfq045 [doi]
AB  - Scanning electron microscope (SEM) image contrasts have been investigated for 
      dislocations in semiconductor and metal materials. It is revealed that single 
      dislocations can be observed in a high contrast in SEM images formed by 
      backscattered electrons (BSE) under the condition of a normal configuration of 
      SEM. The BSE images of dislocations were compared with those of the transmission 
      electron microscope and scanning transmission electron microscope (STEM) and the 
      dependence of BSE image contrast on the tilting of specimen was examined to 
      discuss the origin of image contrast. From the experimental results, it is 
      concluded that the BSE images of single dislocations are attributed to the 
      diffraction effect and related with high-angle dark-field images of STEM.
FAU - Kuwano, Noriyuki
AU  - Kuwano N
AD  - Art, Science and Technology Center for Cooperative Research, Kyushu University, 
      Kasuga, Fukuoka, Japan. kuwano@astec.kyushu-u.ac.jp
FAU - Itakura, Masaru
AU  - Itakura M
FAU - Nagatomo, Yoshiyuki
AU  - Nagatomo Y
FAU - Tachibana, Shigeaki
AU  - Tachibana S
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20100630
PL  - Japan
TA  - J Electron Microsc (Tokyo)
JT  - Journal of electron microscopy
JID - 7611157
EDAT- 2010/07/03 06:00
MHDA- 2010/07/03 06:01
CRDT- 2010/07/03 06:00
PHST- 2010/07/03 06:00 [entrez]
PHST- 2010/07/03 06:00 [pubmed]
PHST- 2010/07/03 06:01 [medline]
AID - dfq045 [pii]
AID - 10.1093/jmicro/dfq045 [doi]
PST - ppublish
SO  - J Electron Microsc (Tokyo). 2010 Aug;59 Suppl 1:S175-81. doi: 
      10.1093/jmicro/dfq045. Epub 2010 Jun 30.