PMID- 20672130 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20110714 LR - 20211020 IS - 1556-276X (Electronic) IS - 1931-7573 (Print) IS - 1556-276X (Linking) VI - 5 IP - 5 DP - 2010 Mar 10 TI - A two-dimensional electron gas as a sensitive detector for time-resolved tunneling measurements on self-assembled quantum dots. PG - 829-33 LID - 10.1007/s11671-010-9569-2 [doi] AB - A two-dimensional electron gas (2DEG) situated nearby a single layer of self-assembled quantum dots (QDs) in an inverted high electron mobility transistor (HEMT) structure is used as a detector for time-resolved tunneling measurements. We demonstrate a strong influence of charged QDs on the conductance of the 2DEG which allows us to probe the tunneling dynamics between the 2DEG and the QDs time resolved. Measurements of hysteresis curves with different sweep times and real-time conductance measurements in combination with an boxcar-like evaluation method enables us to unambiguously identify the transients as tunneling events between the s- and p-electron QD states and the 2DEG and rule out defect-related transients. FAU - Geller, Martin AU - Geller M AD - Experimental Physics and CeNIDE, University of Duisburg-Essen, 47058, Duisburg, Germany. martin.geller@uni-due.de. FAU - Marquardt, Bastian AU - Marquardt B FAU - Lorke, Axel AU - Lorke A FAU - Reuter, Dirk AU - Reuter D FAU - Wieck, Andreas D AU - Wieck AD LA - eng PT - Journal Article DEP - 20100310 PL - United States TA - Nanoscale Res Lett JT - Nanoscale research letters JID - 101279750 PMC - PMC2893892 OTO - NOTNLM OT - III-V semiconductors OT - Indium compounds OT - Self-assembly OT - Semiconductor quantum dots OT - Tunneling OT - Two-dimensional electron gas EDAT- 2010/07/31 06:00 MHDA- 2010/07/31 06:01 PMCR- 2010/03/10 CRDT- 2010/07/31 06:00 PHST- 2009/12/15 00:00 [received] PHST- 2010/02/25 00:00 [accepted] PHST- 2010/07/31 06:00 [entrez] PHST- 2010/07/31 06:00 [pubmed] PHST- 2010/07/31 06:01 [medline] PHST- 2010/03/10 00:00 [pmc-release] AID - 1556-276X-5-829 [pii] AID - 10.1007/s11671-010-9569-2 [doi] PST - epublish SO - Nanoscale Res Lett. 2010 Mar 10;5(5):829-33. doi: 10.1007/s11671-010-9569-2.