PMID- 20738099
OWN - NLM
STAT- MEDLINE
DCOM- 20101221
LR  - 20100922
IS  - 1944-8244 (Print)
IS  - 1944-8244 (Linking)
VI  - 2
IP  - 9
DP  - 2010 Sep
TI  - Effects of dispersion conditions of single-walled carbon nanotubes on the 
      electrical characteristics of thin film network transistors.
PG  - 2672-8
LID - 10.1021/am1005223 [doi]
AB  - To facilitate solution deposition of single-walled carbon nanotubes (SWNTs) for 
      integration into electronic devices they need to be purified and dispersed into 
      solutions. The vigorous sonication process for preparing these dispersions leads 
      to large variations in the length and defect density of SWNTs, affecting the 
      resulting electronic properties. Understanding the effects of solution processing 
      steps can have important implications in the design of SWNT films for electronic 
      applications. Here, we alter the SWNTs by varying the sonication time, followed 
      by deposition of sub-monolayer SWNT network films onto functionalized substrates. 
      The corresponding electrical performance characteristics of the resulting field 
      effect transistors (FETs) are correlated with SWNT network sorting and 
      morphology. As sonication exposure increases, the SWNTs shorten, which not only 
      affects electrical current by increasing the number of junctions but also 
      presumably leads to more defects. The off current of the resulting transistors 
      initially increased with sonication exposure, presumably due to less efficient 
      sorting of semiconducting SWNTs as the defect density increases. After extended 
      sonication, the on and off current decreased because of increased bundling and 
      fewer percolation pathways. The final transistor properties are influenced by the 
      nanotube solution concentration, density, alignment, and the selectivity of 
      surface sorting of the SWNT networks. These results show that in addition to 
      chirality, careful consideration of SWNT dispersion conditions that affect SWNT 
      length, bundle diameter, and defect density is critical for optimal SWNT-FET 
      performance and potentially other SWNT-based electronic devices.
FAU - Barman, Soumendra N
AU  - Barman SN
AD  - Department of Chemical Engineering, Stanford University, Stanford, California 
      94395, USA.
FAU - LeMieux, Melburne C
AU  - LeMieux MC
FAU - Baek, Jaeyeon
AU  - Baek J
FAU - Rivera, Rut
AU  - Rivera R
FAU - Bao, Zhenan
AU  - Bao Z
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PT  - Research Support, U.S. Gov't, Non-P.H.S.
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
RN  - 0 (Colloids)
RN  - 0 (Membranes, Artificial)
RN  - 0 (Nanotubes, Carbon)
SB  - IM
MH  - Colloids/chemistry
MH  - Electric Conductivity
MH  - Equipment Design
MH  - Equipment Failure Analysis
MH  - Materials Testing
MH  - *Membranes, Artificial
MH  - Nanotechnology/*instrumentation
MH  - Nanotubes, Carbon/*chemistry
MH  - *Transistors, Electronic
EDAT- 2010/08/27 06:00
MHDA- 2010/12/22 06:00
CRDT- 2010/08/27 06:00
PHST- 2010/08/27 06:00 [entrez]
PHST- 2010/08/27 06:00 [pubmed]
PHST- 2010/12/22 06:00 [medline]
AID - 10.1021/am1005223 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2010 Sep;2(9):2672-8. doi: 10.1021/am1005223.