PMID- 21051805
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20110526
LR  - 20101110
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 21
IP  - 48
DP  - 2010 Dec 3
TI  - Degradation pattern of SnO(2) nanowire field effect transistors.
PG  - 485201
LID - 10.1088/0957-4484/21/48/485201 [doi]
AB  - The degradation pattern of SnO(2) nanowire field effect transistors (FETs) was 
      investigated by using an individual SnO(2) nanowire that was passivated in 
      sections by either a PMMA (polymethylmethacrylate) or an Al(2)O(3) layer. The 
      PMMA passivated section showed the best mobility performance with a significant 
      positive shift in the threshold voltage. The distinctive two-dimensional R(s)-mu 
      diagram based on a serial resistor connected FET model suggested that this would 
      be a useful tool for evaluating the efficiency for post-treatments that would 
      improve the device performance of a single nanowire transistor.
FAU - Na, Junhong
AU  - Na J
AD  - School of Electrical Engineering, Korea University, Seoul 136-701, Korea.
FAU - Huh, Junghwan
AU  - Huh J
FAU - Park, Sung Chan
AU  - Park SC
FAU - Kim, Daeil
AU  - Kim D
FAU - Kim, Dong Wook
AU  - Kim DW
FAU - Lee, Jae Woo
AU  - Lee JW
FAU - Hwang, In-Sung
AU  - Hwang IS
FAU - Lee, Jong-Heun
AU  - Lee JH
FAU - Ha, Jeong Sook
AU  - Ha JS
FAU - Kim, Gyu Tae
AU  - Kim GT
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20101104
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2010/11/06 06:00
MHDA- 2010/11/06 06:01
CRDT- 2010/11/06 06:00
PHST- 2010/11/06 06:00 [entrez]
PHST- 2010/11/06 06:00 [pubmed]
PHST- 2010/11/06 06:01 [medline]
AID - S0957-4484(10)64343-7 [pii]
AID - 10.1088/0957-4484/21/48/485201 [doi]
PST - ppublish
SO  - Nanotechnology. 2010 Dec 3;21(48):485201. doi: 10.1088/0957-4484/21/48/485201. 
      Epub 2010 Nov 4.