PMID- 21098938
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20110324
LR  - 20101126
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 21
IP  - 50
DP  - 2010 Dec 17
TI  - Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors.
PG  - 505704
LID - 10.1088/0957-4484/21/50/505704 [doi]
AB  - In this study, we report on the formation of a single-crystalline 
      Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructure and its field effect characteristics 
      by controlled reaction between a supercritical fluid-liquid-solid (SFLS) 
      synthesized Ge nanowire and Ni metal contacts. Scanning electron microscopy (SEM) 
      and transmission electron microscopy (TEM) studies reveal a wide temperature 
      range to convert the Ge nanowire to single-crystalline Ni(2)Ge by a thermal 
      diffusion process. The maximum current density of the fully germanide Ni(2)Ge 
      nanowires exceeds 3.5 x 10(7) A cm(-2), and the resistivity is about 88 muOmega cm. 
      The in situ reaction examined by TEM shows atomically sharp interfaces for the 
      Ni(2)Ge/Ge/Ni(2)Ge heterostructure. The interface epitaxial relationships are 
      determined to be [Formula: see text] and [Formula: see text]. Back-gate field 
      effect transistors (FETs) were also fabricated using this low resistivity Ni(2)Ge 
      as source/drain contacts. Electrical measurements show a good p-type FET behavior 
      with an on/off ratio over 10(3) and a one order of magnitude improvement in hole 
      mobility from that of SFLS-synthesized Ge nanowire.
FAU - Tang, Jianshi
AU  - Tang J
AD  - Device Research Laboratory, Department of Electrical Engineering, University of 
      California, Los Angeles, CA 90095, USA. tjianshi@ucla.edu
FAU - Wang, Chiu-Yen
AU  - Wang CY
FAU - Xiu, Faxian
AU  - Xiu F
FAU - Hong, Augustin J
AU  - Hong AJ
FAU - Chen, Shengyu
AU  - Chen S
FAU - Wang, Minsheng
AU  - Wang M
FAU - Zeng, Caifu
AU  - Zeng C
FAU - Yang, Hong-Jie
AU  - Yang HJ
FAU - Tuan, Hsing-Yu
AU  - Tuan HY
FAU - Tsai, Cho-Jen
AU  - Tsai CJ
FAU - Chen, Lih Juann
AU  - Chen LJ
FAU - Wang, Kang L
AU  - Wang KL
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20101122
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2010/11/26 06:00
MHDA- 2010/11/26 06:01
CRDT- 2010/11/25 06:00
PHST- 2010/11/25 06:00 [entrez]
PHST- 2010/11/26 06:00 [pubmed]
PHST- 2010/11/26 06:01 [medline]
AID - S0957-4484(10)68486-3 [pii]
AID - 10.1088/0957-4484/21/50/505704 [doi]
PST - ppublish
SO  - Nanotechnology. 2010 Dec 17;21(50):505704. doi: 10.1088/0957-4484/21/50/505704. 
      Epub 2010 Nov 22.