PMID- 21155534
OWN - NLM
STAT- MEDLINE
DCOM- 20110426
LR  - 20131121
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 5
IP  - 1
DP  - 2011 Jan 25
TI  - Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile 
      protons.
PG  - 558-64
LID - 10.1021/nn102633z [doi]
AB  - We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect 
      transistors (FETs) using mobile protons that are generated by high-pressure 
      hydrogen annealing (HPHA) at relatively low temperature (400  degrees C). These ZnO 
      nanowire devices exhibited reproducible hysteresis, reversible switching, and 
      nonvolatile memory behaviors in comparison with those of the conventional FET 
      devices. We show that the memory characteristics are attributed to the movement 
      of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface 
      by the applied gate electric field. The memory mechanism is explained in terms of 
      the tuning of interface properties, such as effective electric field, surface 
      charge density, and surface barrier potential due to the movement of protons in 
      the SiO(2) layer, consistent with the UV photoresponse characteristics of 
      nanowire memory devices. Our study will further provide a useful route of 
      creating memory functionality and incorporating proton-based storage elements 
      onto a modified CMOS platform for FET memory devices using nanomaterials.
FAU - Yoon, Jongwon
AU  - Yoon J
AD  - School of Materials Science and Engineering, Department of Nanobio Materials and 
      Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea.
FAU - Hong, Woong-Ki
AU  - Hong WK
FAU - Jo, Minseok
AU  - Jo M
FAU - Jo, Gunho
AU  - Jo G
FAU - Choe, Minhyeok
AU  - Choe M
FAU - Park, Woojin
AU  - Park W
FAU - Sohn, Jung Inn
AU  - Sohn JI
FAU - Nedic, Stanko
AU  - Nedic S
FAU - Hwang, Hyungsang
AU  - Hwang H
FAU - Welland, Mark E
AU  - Welland ME
FAU - Lee, Takhee
AU  - Lee T
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20101214
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
RN  - 0 (Protons)
RN  - 7631-86-9 (Silicon Dioxide)
RN  - 7YNJ3PO35Z (Hydrogen)
RN  - SOI2LOH54Z (Zinc Oxide)
RN  - Z4152N8IUI (Silicon)
SB  - IM
MH  - Electricity
MH  - Hydrogen/chemistry
MH  - *Motion
MH  - Nanotechnology
MH  - Nanowires/*chemistry
MH  - Pressure
MH  - *Protons
MH  - Silicon/chemistry
MH  - Silicon Dioxide/chemistry
MH  - Surface Properties
MH  - Temperature
MH  - *Transistors, Electronic
MH  - Zinc Oxide/*chemistry
EDAT- 2010/12/16 06:00
MHDA- 2011/04/27 06:00
CRDT- 2010/12/16 06:00
PHST- 2010/12/16 06:00 [entrez]
PHST- 2010/12/16 06:00 [pubmed]
PHST- 2011/04/27 06:00 [medline]
AID - 10.1021/nn102633z [doi]
PST - ppublish
SO  - ACS Nano. 2011 Jan 25;5(1):558-64. doi: 10.1021/nn102633z. Epub 2010 Dec 14.