PMID- 21375286 OWN - NLM STAT- MEDLINE DCOM- 20110810 LR - 20200930 IS - 1530-6992 (Electronic) IS - 1530-6984 (Linking) VI - 11 IP - 4 DP - 2011 Apr 13 TI - Quantum confinement induced performance enhancement in sub-5-nm lithographic Si nanowire transistors. PG - 1412-7 LID - 10.1021/nl103278a [doi] AB - We demonstrate lithographically fabricated Si nanowire field effect transistors (FETs) with long Si nanowires of tiny cross sectional size ( approximately 3-5 nm) exhibiting high performance without employing complementarily doped junctions or high channel doping. These nanowire FETs show high peak hole mobility (as high as over 1200 cm(2)/(V s)), current density, and drive current as well as low drain leakage current and high on/off ratio. Comparison of nanowire FETs with nanobelt FETs shows enhanced performance is a result of significant quantum confinement in these 3-5 nm wires. This study suggests simple (no additional doping) FETs using tiny top-down nanowires can deliver high performance for potential impact on both CMOS scaling and emerging applications such as biosensing. FAU - Trivedi, Krutarth AU - Trivedi K AD - Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States. FAU - Yuk, Hyungsang AU - Yuk H FAU - Floresca, Herman Carlo AU - Floresca HC FAU - Kim, Moon J AU - Kim MJ FAU - Hu, Walter AU - Hu W LA - eng PT - Journal Article PT - Research Support, Non-U.S. Gov't PT - Research Support, U.S. Gov't, Non-P.H.S. DEP - 20110304 PL - United States TA - Nano Lett JT - Nano letters JID - 101088070 RN - Z4152N8IUI (Silicon) SB - IM MH - Equipment Design MH - Equipment Failure Analysis MH - Nanostructures/*chemistry/ultrastructure MH - Particle Size MH - Photography/*methods MH - Quantum Theory MH - Silicon/*chemistry MH - *Transistors, Electronic EDAT- 2011/03/08 06:00 MHDA- 2011/08/11 06:00 CRDT- 2011/03/08 06:00 PHST- 2011/03/08 06:00 [entrez] PHST- 2011/03/08 06:00 [pubmed] PHST- 2011/08/11 06:00 [medline] AID - 10.1021/nl103278a [doi] PST - ppublish SO - Nano Lett. 2011 Apr 13;11(4):1412-7. doi: 10.1021/nl103278a. Epub 2011 Mar 4.