PMID- 21456177
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20110421
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 11
IP  - 2
DP  - 2011 Feb
TI  - Fabrication and characterization of nano-channel field effect transistors 
      patterned by AFM anodic oxidation.
PG  - 1310-3
AB  - We report a top-down approach based on atomic force microscope (AFM) local anodic 
      oxidation (LAO) for the fabrications of the nanowire and nano-ribbon field effect 
      transistors (FETs). In order to investigate the transport characteristics of 
      nano-channel, we fabricated simple FET structures with channel width W 
      approximately 300 nm (nanowire) and 10 microm (nano-ribbon) on 20 nm-thick 
      silicon-on-insulator (SOL) wafers. In order to investigate the transport behavior 
      in the device with different channel geometries, we have performed detailed 
      two-dimensional simulations of nanowire and reference nano-ribbon FETs with a 
      fixed channel length L and thickness t but varying channel width W from 300 nm to 
      10 microm. By evaluating the charge distributions, we have shown that the 
      increase of 'on state' conduction current in SiNW channel is a dominant factor, 
      which consequently result in the improved on/off current ratio of the nanowire 
      FET.
FAU - Choi, Chang-Yong
AU  - Choi CY
AD  - Department of Electronic Materials Engineering, Kwangwoon University, Seoul 
      139-701, Korea.
FAU - Moon, Kyoung-Sook
AU  - Moon KS
FAU - Koo, Sang-Mo
AU  - Koo SM
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2011/04/02 06:00
MHDA- 2011/04/02 06:01
CRDT- 2011/04/02 06:00
PHST- 2011/04/02 06:00 [entrez]
PHST- 2011/04/02 06:00 [pubmed]
PHST- 2011/04/02 06:01 [medline]
AID - 10.1166/jnn.2011.3389 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2011 Feb;11(2):1310-3. doi: 10.1166/jnn.2011.3389.