PMID- 21495684
OWN - NLM
STAT- MEDLINE
DCOM- 20110926
LR  - 20171116
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 5
IP  - 5
DP  - 2011 May 24
TI  - Epitaxial growth of InGaN nanowire arrays for light emitting diodes.
PG  - 3970-6
LID - 10.1021/nn200521r [doi]
AB  - Significant synthetic challenges remain for the epitaxial growth of high-quality 
      InGaN across the entire compositional range. One strategy to address these 
      challenges has been to use the nanowire geometry because of its strain relieving 
      properties. Here, we demonstrate the heteroepitaxial growth of In(x)Ga(1-x)N 
      nanowire arrays (0.06 </= x </= 0.43) on c-plane sapphire (Al(2)O(3)(001)) using a 
      halide chemical vapor deposition (HCVD) technique. Scanning electron microscopy 
      and X-ray diffraction characterization confirmed the long-range order and epitaxy 
      of vertically oriented nanowires. Structural characterization by transmission 
      electron microscopy showed that single crystalline nanowires were grown in the 
      ⟨002⟩ direction. Optical properties of InGaN nanowire arrays were investigated by 
      absorption and photoluminescence measurements. These measurements show the 
      tunable direct band gap properties of InGaN nanowires into the yellow-orange 
      region of the visible spectrum. To demonstrate the utility of our HCVD method for 
      implementation into devices, LEDs were fabricated from In(x)Ga(1-x)N nanowires 
      epitaxially grown on p-GaN(001). Devices showed blue (x = 0.06), green (x = 
      0.28), and orange (x = 0.43) electroluminescence, demonstrating electrically 
      driven color tunable emission from this p-n junction.
FAU - Hahn, Christopher
AU  - Hahn C
AD  - Department of Chemistry, University of California, Berkeley, California 94720, 
      United States.
FAU - Zhang, Zhaoyu
AU  - Zhang Z
FAU - Fu, Anthony
AU  - Fu A
FAU - Wu, Cheng Hao
AU  - Wu CH
FAU - Hwang, Yun Jeong
AU  - Hwang YJ
FAU - Gargas, Daniel J
AU  - Gargas DJ
FAU - Yang, Peidong
AU  - Yang P
LA  - eng
PT  - Journal Article
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20110425
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
RN  - 045A6V3VFX (Indium)
RN  - 1R9CC3P9VL (gallium nitride)
RN  - CH46OC8YV4 (Gallium)
RN  - D66UAC005A (indium nitride)
SB  - IM
MH  - Crystallization/methods
MH  - Equipment Design
MH  - Equipment Failure Analysis
MH  - Gallium/*chemistry
MH  - Indium/*chemistry
MH  - Lighting/*instrumentation
MH  - Nanostructures/*chemistry/*ultrastructure
MH  - Particle Size
MH  - *Semiconductors
EDAT- 2011/04/19 06:00
MHDA- 2011/09/29 06:00
CRDT- 2011/04/19 06:00
PHST- 2011/04/19 06:00 [entrez]
PHST- 2011/04/19 06:00 [pubmed]
PHST- 2011/09/29 06:00 [medline]
AID - 10.1021/nn200521r [doi]
PST - ppublish
SO  - ACS Nano. 2011 May 24;5(5):3970-6. doi: 10.1021/nn200521r. Epub 2011 Apr 25.