PMID- 21517039
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20110816
LR  - 20110525
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 3
IP  - 5
DP  - 2011 May
TI  - Electrical contact properties between the accumulation layer and metal electrodes 
      in ultrathin poly(3-hexylthiophene)(P3HT) field effect transistors.
PG  - 1574-80
LID - 10.1021/am200143g [doi]
AB  - Probing contact properties between an ultrathin conjugated polymer film and metal 
      electrodes in field effect transistors (FETs) is crucial not only to 
      understanding charge transport properties in the accumulation layer but also in 
      building organic sensors with high sensitivity. We investigated the contact 
      properties between gold electrodes and poly(3-hexylthiophene) (P3HT) as a 
      function of film thickness using gated four-point sheet resistance measurements. 
      In an FET with a 2 nm thick P3HT film, a large voltage drop of 1.9 V (V(D) = -3 
      V) corresponding to a contact resistance of 2.3 x 10(8) Omega was observed. An 
      effective FET mobility of 1.4 x 10(-3) cm(2)/(V s) was calculated when the 
      voltage drop at the contacts was factored out, which is approximately a factor of 
      3 greater than the two-contact FET mobility of 5.5 x 10(-4) cm(2)/(V s). A sharp 
      decrease in the ratio of the contact resistance to the channel resistance was 
      observed with increasing film thickness up to a thickness of approximately 6 nm, 
      separating a contact limited regime from a charge transport limited regime. The 
      origin of the large contact resistance observed in the device prepared with an 
      ultrathin P3HT film is discussed in light of results from X-ray diffraction (XRD) 
      and atomic force microscopy (AFM) studies.
FAU - Park, Byoungnam
AU  - Park B
AD  - School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, 
      Atlanta, Georgia 30332, USA. metalpbn@gmail.com
FAU - Aiyar, Avishek
AU  - Aiyar A
FAU - Hong, Jung-Il
AU  - Hong JI
FAU - Reichmanis, Elsa
AU  - Reichmanis E
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20110506
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
EDAT- 2011/04/27 06:00
MHDA- 2011/04/27 06:01
CRDT- 2011/04/27 06:00
PHST- 2011/04/27 06:00 [entrez]
PHST- 2011/04/27 06:00 [pubmed]
PHST- 2011/04/27 06:01 [medline]
AID - 10.1021/am200143g [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2011 May;3(5):1574-80. doi: 10.1021/am200143g. Epub 
      2011 May 6.