PMID- 21673377
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20111014
LR  - 20110622
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 22
IP  - 29
DP  - 2011 Jul 22
TI  - Growth direction modulation and diameter-dependent mobility in InN nanowires.
PG  - 295701
LID - 10.1088/0957-4484/22/29/295701 [doi]
AB  - Diameter-dependent electrical properties of InN nanowires (NWs) grown by chemical 
      vapor deposition have been investigated. The NWs exhibited interesting properties 
      of coplanar deflection at specific angles, either spontaneously, or when induced 
      by other NWs or lithographically patterned barriers. InN NW-based back-gated 
      field effect transistors (FETs) showed excellent gate control and drain current 
      saturation behaviors. Both NW conductance and carrier mobility calculated from 
      the FET characteristics were found to increase regularly with a decrease in NW 
      diameter. The observed mobility and conductivity variations have been modeled by 
      considering NW surface and core conduction paths.
FAU - Koley, Goutam
AU  - Koley G
AD  - Department of Electrical Engineering and Nanocenter, University of South 
      Carolina, Columbia, SC 29208, USA. koley@engr.sc.edu
FAU - Cai, Zhihua
AU  - Cai Z
FAU - Quddus, Ehtesham Bin
AU  - Quddus EB
FAU - Liu, Jie
AU  - Liu J
FAU - Qazi, Muhammad
AU  - Qazi M
FAU - Webb, Richard A
AU  - Webb RA
LA  - eng
PT  - Journal Article
PT  - Research Support, U.S. Gov't, Non-P.H.S.
DEP - 20110614
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2011/06/16 06:00
MHDA- 2011/06/16 06:01
CRDT- 2011/06/16 06:00
PHST- 2011/06/16 06:00 [entrez]
PHST- 2011/06/16 06:00 [pubmed]
PHST- 2011/06/16 06:01 [medline]
AID - S0957-4484(11)82727-3 [pii]
AID - 10.1088/0957-4484/22/29/295701 [doi]
PST - ppublish
SO  - Nanotechnology. 2011 Jul 22;22(29):295701. doi: 10.1088/0957-4484/22/29/295701. 
      Epub 2011 Jun 14.