PMID- 21770150
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20110818
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 11
IP  - 6
DP  - 2011 Jun
TI  - Well-crystalline ZnO nanowire based field effect transistors (FETs).
PG  - 5102-7
AB  - Well-crystalline ZnO nanowires were grown on Si(100) via non-catalytic thermal 
      evaporation process using metallic zinc powder in presence of oxygen. The 
      detailed morphological characterizations by field emission scanning electron 
      microscopy (FESEM) and transmission electron microscopy (TEM) confirmed that the 
      synthesized products are nanowires with the typical diameter and lengths of 
      approximately 55 +/- 5 nm and several micrometers, respectively and are grown in 
      high density over the silicon substrate. The detailed structural 
      characterizations by high-resolution TEM and X-ray diffraction confirmed that the 
      synthesized nanowires are well-crystalline and possessing wurtzite hexagonal 
      phase. The presence of Raman-active optical-phonon E2(high) mode at 437 cm(-1) in 
      the Raman-scattering spectrum confirms good crystal quality for the as-grown ZnO 
      nanowires. The electrical transport properties of the as-grown nanowires were 
      explored by fabricating single nanowire based field effect transistors (FETs). 
      The fabricated single ZnO nanowire based FET exhibits carrier concentration and 
      electron mobility of approximately 7.49 x 10(17) cm(-3) and approximately 8.42 
      cm2V(-1)s(-1), respectively.
FAU - Kim, S H
AU  - Kim SH
AD  - Collaborative Research Centre for Sensors and Electronic Devices (CRCSED), Centre 
      for Advanced Materials and Nano-Engineering (CAMNE), Najran University, PO Box 
      1988, Najran 11001, Kingdom of Saudi Arabia.
FAU - Umar, Ahmad
AU  - Umar A
FAU - Hwang, S W
AU  - Hwang SW
FAU - Al-Sayari, S A
AU  - Al-Sayari SA
FAU - Abaker, M
AU  - Abaker M
FAU - Al-Hajry, A
AU  - Al-Hajry A
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2011/07/21 06:00
MHDA- 2011/07/21 06:01
CRDT- 2011/07/21 06:00
PHST- 2011/07/21 06:00 [entrez]
PHST- 2011/07/21 06:00 [pubmed]
PHST- 2011/07/21 06:01 [medline]
AID - 10.1166/jnn.2011.4744 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2011 Jun;11(6):5102-7. doi: 10.1166/jnn.2011.4744.