PMID- 21825636
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20121002
LR  - 20110809
IS  - 0957-4484 (Print)
IS  - 0957-4484 (Linking)
VI  - 19
IP  - 16
DP  - 2008 Apr 23
TI  - Modelling of multi-wall CNT devices by self-consistent analysis of multichannel 
      transport.
PG  - 165202
LID - 10.1088/0957-4484/19/16/165202 [doi]
AB  - We present a generalization of the self-consistent analysis of carbon nanotube 
      (CNT) field effect transistors (FETs) to the case of multi-wall/multi-band 
      coherent carrier transport. The contribution to charge diffusion, due to 
      different walls and sub-bands of a multi-wall (mw) CNT is shown to be 
      non-negligible, especially for high applied external voltages and 'large' 
      diameters. The transmission line formalism is used in order to solve the 
      Schrodinger equation for carrier propagation, coupled to the Poisson equation 
      describing the spatial voltage distribution throughout the device. We provide 
      detailed numerical results for semiconducting mw-nanotubes of different diameters 
      and lengths, such as current-voltage characteristics and frequency responses.
FAU - Mencarelli, D
AU  - Mencarelli D
AD  - Universita Politecnica delle Marche, Via Brecce Bianche 12, 60100, Ancona, Italy.
FAU - Rozzi, T
AU  - Rozzi T
FAU - Camilloni, C
AU  - Camilloni C
FAU - Maccari, L
AU  - Maccari L
FAU - di Donato, A
AU  - di Donato A
FAU - Pierantoni, L
AU  - Pierantoni L
LA  - eng
PT  - Journal Article
DEP - 20080318
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2008/04/23 00:00
MHDA- 2008/04/23 00:01
CRDT- 2011/08/10 06:00
PHST- 2011/08/10 06:00 [entrez]
PHST- 2008/04/23 00:00 [pubmed]
PHST- 2008/04/23 00:01 [medline]
AID - S0957-4484(08)63789-7 [pii]
AID - 10.1088/0957-4484/19/16/165202 [doi]
PST - ppublish
SO  - Nanotechnology. 2008 Apr 23;19(16):165202. doi: 10.1088/0957-4484/19/16/165202. 
      Epub 2008 Mar 18.