PMID- 21825809
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20130704
LR  - 20110809
IS  - 0957-4484 (Print)
IS  - 0957-4484 (Linking)
VI  - 19
IP  - 24
DP  - 2008 Jun 18
TI  - Transformation of InAs islands to quantum ring structures by metalorganic vapor 
      phase epitaxy.
PG  - 245304
LID - 10.1088/0957-4484/19/24/245304 [doi]
AB  - The transformation of InAs islands to quantum rings (QRs) by metalorganic vapor 
      phase epitaxy is investigated. After covering the InAs islands with a thin GaAs 
      partial capping layer and annealing under tertiarybutylarsine (TBAs) flow, 
      ring-shaped nanostructures with a density of 10(7)-10(9) cm(-2) are obtained at 
      500-600  degrees C. The effects of the growth temperature, annealing process and 
      thickness of the partial capping layer are studied. Optimum values for the 
      annealing time and the partial capping layer thickness were found to be 60-120 s 
      and 0.5-2.0 nm, respectively. Low temperature photoluminescence (PL) emission 
      peaks from islands and QRs grown at 500  degrees C are observed at 1.04 eV and 1.22 eV, 
      respectively. The annealing temperature affected the QR evolution and the PL 
      emission from the QRs due to the temperature dependence of the diffusion rate of 
      indium atoms.
FAU - Aierken, A
AU  - Aierken A
FAU - Hakkarainen, T
AU  - Hakkarainen T
FAU - Riikonen, J
AU  - Riikonen J
FAU - Sopanen, M
AU  - Sopanen M
LA  - eng
PT  - Journal Article
DEP - 20080509
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2008/06/18 00:00
MHDA- 2008/06/18 00:01
CRDT- 2011/08/10 06:00
PHST- 2011/08/10 06:00 [entrez]
PHST- 2008/06/18 00:00 [pubmed]
PHST- 2008/06/18 00:01 [medline]
AID - S0957-4484(08)67267-0 [pii]
AID - 10.1088/0957-4484/19/24/245304 [doi]
PST - ppublish
SO  - Nanotechnology. 2008 Jun 18;19(24):245304. doi: 10.1088/0957-4484/19/24/245304. 
      Epub 2008 May 9.