PMID- 21828739
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20121002
LR  - 20110810
IS  - 0957-4484 (Print)
IS  - 0957-4484 (Linking)
VI  - 19
IP  - 28
DP  - 2008 Jul 16
TI  - Noise characteristics of single-walled carbon nanotube network transistors.
PG  - 285705
LID - 10.1088/0957-4484/19/28/285705 [doi]
AB  - The noise characteristics of randomly networked single-walled carbon nanotubes 
      grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied 
      with field effect transistors (FETs). Due to the geometrical complexity of 
      nanotube networks in the channel area and the large number of 
      tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the 
      noise shows a similar level to that of a single single-walled carbon nanotube 
      transistor. Detailed analysis is performed with the parameters of number of 
      mobile carriers and mobility in the different environment. This shows that the 
      change in the number of mobile carriers resulting in the mobility change due to 
      adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube 
      surface is a key factor in the 1/f noise level for carbon nanotube network 
      transistors.
FAU - Kim, Un Jeong
AU  - Kim UJ
AD  - Frontier Research Laboratory, Samsung Advanced Institute of Technology, Yongin, 
      Korea.
FAU - Kim, Kang Hyun
AU  - Kim KH
FAU - Kim, Kyu Tae
AU  - Kim KT
FAU - Min, Yo-Sep
AU  - Min YS
FAU - Park, Wanjun
AU  - Park W
LA  - eng
PT  - Journal Article
DEP - 20080603
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2008/07/16 00:00
MHDA- 2008/07/16 00:01
CRDT- 2011/08/11 06:00
PHST- 2011/08/11 06:00 [entrez]
PHST- 2008/07/16 00:00 [pubmed]
PHST- 2008/07/16 00:01 [medline]
AID - S0957-4484(08)73579-7 [pii]
AID - 10.1088/0957-4484/19/28/285705 [doi]
PST - ppublish
SO  - Nanotechnology. 2008 Jul 16;19(28):285705. doi: 10.1088/0957-4484/19/28/285705. 
      Epub 2008 Jun 3.