PMID- 21967829
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20120123
LR  - 20111005
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 22
IP  - 43
DP  - 2011 Oct 28
TI  - Bandgap engineering of zigzag graphene nanoribbons by manipulating edge states 
      via defective boundaries.
PG  - 435702
LID - 10.1088/0957-4484/22/43/435702 [doi]
AB  - One of the most severe limits of graphene nanoribbons (GNRs) in future 
      applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field 
      effect transistors (FETs), and armchair GNR (AGNR) based FETs require atomically 
      precise control of edges and width. Using the tight-binding approach and first 
      principles method, we derived and proved a general boundary condition for the 
      opening of a significant bandgap in ZGNRs with defective edge structures. The 
      proposed semiconducting ZGNRs have some interesting properties one of which is 
      that they can be embedded and integrated in a large piece of graphene without the 
      need to completely cut them out. We also demonstrated a new type of 
      high-performance all-ZGNR FET. Previous proposals of graphene FETs are all based 
      on AGNRs.
FAU - Zhang, Aihua
AU  - Zhang A
AD  - Department of Physics, National University of Singapore, 117542, Singapore.
FAU - Wu, Yihong
AU  - Wu Y
FAU - Ke, San-Huang
AU  - Ke SH
FAU - Feng, Yuan Ping
AU  - Feng YP
FAU - Zhang, Chun
AU  - Zhang C
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20111003
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2011/10/05 06:00
MHDA- 2011/10/05 06:01
CRDT- 2011/10/05 06:00
PHST- 2011/10/05 06:00 [entrez]
PHST- 2011/10/05 06:00 [pubmed]
PHST- 2011/10/05 06:01 [medline]
AID - S0957-4484(11)96080-2 [pii]
AID - 10.1088/0957-4484/22/43/435702 [doi]
PST - ppublish
SO  - Nanotechnology. 2011 Oct 28;22(43):435702. doi: 10.1088/0957-4484/22/43/435702. 
      Epub 2011 Oct 3.