PMID- 22111808
OWN - NLM
STAT- MEDLINE
DCOM- 20120427
LR  - 20200930
IS  - 1530-6992 (Electronic)
IS  - 1530-6984 (Linking)
VI  - 12
IP  - 1
DP  - 2012 Jan 11
TI  - Reconfigurable silicon nanowire transistors.
PG  - 119-24
LID - 10.1021/nl203094h [doi]
AB  - Over the past 30 years electronic applications have been dominated by 
      complementary metal oxide semiconductor (CMOS) devices. These combine p- and 
      n-type field effect transistors (FETs) to reduce static power consumption. 
      However, CMOS transistors are limited to static electrical functions, i.e., 
      electrical characteristics that cannot be changed. Here we present the concept 
      and a demonstrator of a universal transistor that can be reversely configured as 
      p-FET or n-FET simply by the application of an electric signal. This concept is 
      enabled by employing an axial nanowire heterostructure 
      (metal/intrinsic-silicon/metal) with independent gating of the Schottky 
      junctions. In contrast to conventional FETs, charge carrier polarity and 
      concentration are determined by selective and sensitive control of charge carrier 
      injections at each Schottky junction, explicitly avoiding the use of dopants as 
      shown by measurements and calculations. Besides the additional functionality, the 
      fabricated nanoscale devices exhibit enhanced electrical characteristics, e.g., 
      record on/off ratio of up to 1 x 10(9) for Schottky transistors. This novel 
      nanotransistor technology makes way for a simple and compact hardware platform 
      that can be flexibly reconfigured during operation to perform different logic 
      computations yielding unprecedented circuit design flexibility.
CI  - (c) 2011 American Chemical Society
FAU - Heinzig, Andre
AU  - Heinzig A
AD  - Namlab gGmbH, Nothnitzer Str. 64, 01187 Dresden, Germany.
FAU - Slesazeck, Stefan
AU  - Slesazeck S
FAU - Kreupl, Franz
AU  - Kreupl F
FAU - Mikolajick, Thomas
AU  - Mikolajick T
FAU - Weber, Walter M
AU  - Weber WM
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20111201
PL  - United States
TA  - Nano Lett
JT  - Nano letters
JID - 101088070
RN  - Z4152N8IUI (Silicon)
SB  - IM
MH  - Crystallization/*methods
MH  - Equipment Design
MH  - Equipment Failure Analysis
MH  - Nanostructures/*chemistry/*ultrastructure
MH  - Nanotechnology/*instrumentation
MH  - Particle Size
MH  - Silicon/*chemistry
MH  - *Transistors, Electronic
EDAT- 2011/11/25 06:00
MHDA- 2012/04/28 06:00
CRDT- 2011/11/25 06:00
PHST- 2011/11/25 06:00 [entrez]
PHST- 2011/11/25 06:00 [pubmed]
PHST- 2012/04/28 06:00 [medline]
AID - 10.1021/nl203094h [doi]
PST - ppublish
SO  - Nano Lett. 2012 Jan 11;12(1):119-24. doi: 10.1021/nl203094h. Epub 2011 Dec 1.