PMID- 22164066
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20120628
LR  - 20211021
IS  - 1424-8220 (Electronic)
IS  - 1424-8220 (Linking)
VI  - 11
IP  - 8
DP  - 2011
TI  - Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and 
      low-power rectenna applications.
PG  - 8127-42
LID - 10.3390/s110808127 [doi]
AB  - A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs 
      high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) 
      measurements show good device rectification, with a Schottky barrier height of 
      0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier 
      height and the theoretical value (1.443 eV) are due to the fabrication process 
      and smaller contact area. The RF signals up to 1 GHz are rectified well by the 
      fabricated Schottky diode and a stable DC output voltage is obtained. The 
      increment ratio of output voltage vs input power is 0.2 V/dBm for all tested 
      frequencies, which is considered good enough for RF power detection. Power 
      conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power 
      of 20 dBm with series connection between diode and load, which also shows the 
      device's good potential as a rectenna device with further improvement. The 
      fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough 
      designs for RF power detectors, as well as ultra-low power on-chip rectenna 
      device technology to be integrated in nanosystems.
FAU - Hashim, Abdul Manaf
AU  - Hashim AM
AD  - Material Innovations and Nanoelectronics Research Group, Faculty of Electrical 
      Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia. 
      manaf@fke.utm.my
FAU - Mustafa, Farahiyah
AU  - Mustafa F
FAU - Rahman, Shaharin Fadzli Abd
AU  - Rahman SF
FAU - Rahman, Abdul Rahim Abdul
AU  - Rahman AR
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
DEP - 20110818
PL  - Switzerland
TA  - Sensors (Basel)
JT  - Sensors (Basel, Switzerland)
JID - 101204366
PMC - PMC3231723
OTO - NOTNLM
OT  - AlGaAs/GaAs
OT  - HEMT
OT  - RF power detector
OT  - Schottky diode
OT  - rectenna
EDAT- 2011/12/14 06:00
MHDA- 2011/12/14 06:01
PMCR- 2011/01/01
CRDT- 2011/12/14 06:00
PHST- 2011/07/15 00:00 [received]
PHST- 2011/08/08 00:00 [revised]
PHST- 2011/08/12 00:00 [accepted]
PHST- 2011/12/14 06:00 [entrez]
PHST- 2011/12/14 06:00 [pubmed]
PHST- 2011/12/14 06:01 [medline]
PHST- 2011/01/01 00:00 [pmc-release]
AID - s110808127 [pii]
AID - sensors-11-08127 [pii]
AID - 10.3390/s110808127 [doi]
PST - ppublish
SO  - Sensors (Basel). 2011;11(8):8127-42. doi: 10.3390/s110808127. Epub 2011 Aug 18.